一种塑料封装的ku波段LNB，在0.18um CMOS中具有非常高的电源锁相环敏感性

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI:10.1109/SMIC.2010.5422974

K. Miyashita

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引用次数: 10

摘要

本文提出了一种采用0.18um CMOS技术的ku波段低噪声模块，该模块对电源锁相环具有很高的敏感性。前端将输入信号从ku波段(10.5 ~ 13GHz)下转换为中频(~ 2.3GHz)。完全集成的LNB专用于卫星接收器和微波链路产品。包含全差分变容器的压控振荡器显示出非常低的电源灵敏度(Kpss= - 0.18[%/V])，可以消除片上稳压器。LNB性能包括28.2dB增益、- 20.5dBm IIP3、3.4dB NF和- 107dBc/Hz相位噪声。前端从1.8V电源消耗364mW。核心尺寸约为0.95×2.3 [mm2]。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A plastic packaged Ku-band LNB with very high susceptibility to supply PLL in 0.18um CMOS

This paper presents a Ku-band low-noise block that includes very high susceptibility to power supply PLL in a 0.18um CMOS technology. The front-end down-converts the input signal from the Ku-band (10.5∼13GHz) to the IF (∼2.3GHz). The fully integrated LNB is dedicated to both satellite receivers and microwave link products. The VCO that includes full differential varactor shows a very low supply sensitivity (Kpss=−0.18[%/V]) that can eliminates on chip voltage regulator. The LNB performances include 28.2dB gain, −20.5dBm IIP3, 3.4dB NF, and −107dBc/Hz phase noise at 1MHz offset. The front-end consumes 364mW from a 1.8V supply. The core size is about 0.95×2.3 [mm2].

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2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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