发布求助
文献互助 智能选刊 最新文献

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)最新文献

筛选
英文 中文
On the large-signal robustness of SiGe HBT LNAs for high-frequency wireless applications 高频无线应用中SiGe HBT LNAs的大信号鲁棒性
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-01-10 DOI: 10.1109/SMIC.2010.5422968
T. Thrivikraman, A. Madan, J. Cressler
{"title":"On the large-signal robustness of SiGe HBT LNAs for high-frequency wireless applications","authors":"T. Thrivikraman, A. Madan, J. Cressler","doi":"10.1109/SMIC.2010.5422968","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422968","url":null,"abstract":"We present measured results and analysis from high-power testing of three different X-band SiGe HBT LNAs. The custom measurement setup allowed high RF power (up to 32 dBm) to be applied to the input of the LNAs for 400 sec. During the stressing, the bias current was monitored and the pre/post-stress dc and ac characteristics were measured. The results indicate that, in the three LNAs tested, catastrophic failures can occur at these high powers, while at lower input power (less than 30 dBm), the LNA gain is degraded. Analysis shows that during the stressing, the collector current density inside the transistors increases enough to damage the device, in a manner similar to that experienced during mixed-mode reliability stress.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116125985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
A V-band 90-nm CMOS low-noise amplifier with modified CPW transmission lines for UWB systems 一种用于超宽带系统的v波段90纳米CMOS低噪声放大器，采用改进的CPW传输线
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-01-10 DOI: 10.1109/RWS.2010.5434106
I. Haroun, J. Wight, C. Plett, A. Fathy, Y. Hsu
{"title":"A V-band 90-nm CMOS low-noise amplifier with modified CPW transmission lines for UWB systems","authors":"I. Haroun, J. Wight, C. Plett, A. Fathy, Y. Hsu","doi":"10.1109/RWS.2010.5434106","DOIUrl":"https://doi.org/10.1109/RWS.2010.5434106","url":null,"abstract":"A V-band low-noise, high gain, high linearity single-stage amplifier has been developed in a 90-nm CMOS technology. The design utilized modified co-planar waveguide transmission lines for the input/output matching networks, to avoid lines' width and spacing constraints and to sustain small chip area and low cost fabrication. The developed amplifier exhibited a low noise figure of 4.1 dB, and a gain higher than 10 dB in the frequency range of 57–58 GHz. Additionally, the amplifier has linear characteristics and its measured third-order intercept (IIP3) point is greater than 3 dBm. The proposed design is well suited for millimeter-wave (mmW) front-ends in ultra-wideband (UWB) radio-over-fiber (RoF) systems for high data-rate communications.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-01-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128797515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Development toward wafer-scale graphene RF electronics 晶圆级石墨烯射频电子学的发展
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2009-05-15 DOI: 10.1109/SMIC.2010.5422991
J. Moon, D. Curtis, M. Hu, D. Wong, P. Campbell, G. Jernigan, J. Tedesco, B. Vanmil, R. Myers-Ward, C. Eddy, D. Gaskill, J. Robinson, M. Fanton, P. Asbeck
{"title":"Development toward wafer-scale graphene RF electronics","authors":"J. Moon, D. Curtis, M. Hu, D. Wong, P. Campbell, G. Jernigan, J. Tedesco, B. Vanmil, R. Myers-Ward, C. Eddy, D. Gaskill, J. Robinson, M. Fanton, P. Asbeck","doi":"10.1109/SMIC.2010.5422991","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422991","url":null,"abstract":"We will present recent development of graphene FET technology on a wafer scale, including epitaxial graphene growth, device fabrication and characterization. The epitaxial growth of graphene on 2-inch wafers were fabricated via graphitization of Si-face SiC(0001) substrates. The sheet electron carrier density of these layers were typically 10<sup>-13</sup> /cm<sup>2</sup> at room temperature and had mobility of ~ 1500 cm<sup>2</sup> V<sup>-1</sup>S<sup>-1</sup> or higher. Graphene FETs were fabricated with source and drain non-alloyed ohmic metal schemes. Metal gates were used on top of atomic-layer-deposited high-k (Al<sub>2</sub>O<sub>3</sub>) gate dielectric layer. DC and RF performance of the world's first epitaxial graphene RF FETs is presented.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2009-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121532808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
首页 上一页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信