一种用于超宽带系统的v波段90纳米CMOS低噪声放大器，采用改进的CPW传输线

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-01-10 DOI:10.1109/RWS.2010.5434106

I. Haroun, J. Wight, C. Plett, A. Fathy, Y. Hsu

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引用次数: 16

摘要

采用90纳米CMOS技术研制了一种v波段低噪声、高增益、高线性单级放大器。该设计采用改进的共面波导传输线作为输入/输出匹配网络，避免了线路宽度和间距的限制，保持了小芯片面积和低制造成本。所研制的放大器具有4.1 dB的低噪声系数，在57 ~ 58 GHz频率范围内增益大于10 dB。此外，该放大器具有线性特性，其测量的三阶截距(IIP3)点大于3dbm。所提出的设计非常适合用于高数据速率通信的超宽带(UWB)光纤无线电(RoF)系统中的毫米波(mmW)前端。

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A V-band 90-nm CMOS low-noise amplifier with modified CPW transmission lines for UWB systems

A V-band low-noise, high gain, high linearity single-stage amplifier has been developed in a 90-nm CMOS technology. The design utilized modified co-planar waveguide transmission lines for the input/output matching networks, to avoid lines' width and spacing constraints and to sustain small chip area and low cost fabrication. The developed amplifier exhibited a low noise figure of 4.1 dB, and a gain higher than 10 dB in the frequency range of 57–58 GHz. Additionally, the amplifier has linear characteristics and its measured third-order intercept (IIP3) point is greater than 3 dBm. The proposed design is well suited for millimeter-wave (mmW) front-ends in ultra-wideband (UWB) radio-over-fiber (RoF) systems for high data-rate communications.

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来源期刊

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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