J. Moon, D. Curtis, M. Hu, D. Wong, P. Campbell, G. Jernigan, J. Tedesco, B. Vanmil, R. Myers-Ward, C. Eddy, D. Gaskill, J. Robinson, M. Fanton, P. Asbeck
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Development toward wafer-scale graphene RF electronics
We will present recent development of graphene FET technology on a wafer scale, including epitaxial graphene growth, device fabrication and characterization. The epitaxial growth of graphene on 2-inch wafers were fabricated via graphitization of Si-face SiC(0001) substrates. The sheet electron carrier density of these layers were typically 10-13 /cm2 at room temperature and had mobility of ~ 1500 cm2 V-1S-1 or higher. Graphene FETs were fabricated with source and drain non-alloyed ohmic metal schemes. Metal gates were used on top of atomic-layer-deposited high-k (Al2O3) gate dielectric layer. DC and RF performance of the world's first epitaxial graphene RF FETs is presented.
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