{"title":"数字CMOS中14波段多频带OFDM UWB的快速跳频载波生成","authors":"M. Farazian, P. Gudem, L. Larson","doi":"10.1109/SMIC.2010.5422972","DOIUrl":null,"url":null,"abstract":"A 14-band frequency synthesizer for MB-OFDM UWB using an inductor-less design methodology is presented. It is capable of frequency switching across the entire UWB band in approximately 2 nS, and the phase noise is less than −114 dBc/Hz at 1 MHz offset. Implemented in a 0.13µm CMOS technology, the synthesizer dissipates 135 mW from a 1.2 V supply, and occupies only 1.3 mm2 of silicon area.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"162 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Fast hopping carrier generation for 14-band multi-band OFDM UWB in digital CMOS\",\"authors\":\"M. Farazian, P. Gudem, L. Larson\",\"doi\":\"10.1109/SMIC.2010.5422972\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 14-band frequency synthesizer for MB-OFDM UWB using an inductor-less design methodology is presented. It is capable of frequency switching across the entire UWB band in approximately 2 nS, and the phase noise is less than −114 dBc/Hz at 1 MHz offset. Implemented in a 0.13µm CMOS technology, the synthesizer dissipates 135 mW from a 1.2 V supply, and occupies only 1.3 mm2 of silicon area.\",\"PeriodicalId\":404957,\"journal\":{\"name\":\"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"volume\":\"162 \",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2010.5422972\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2010.5422972","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
摘要
提出了一种采用无电感设计方法的14频带MB-OFDM超宽带频率合成器。它能够在大约2ns的时间内在整个UWB频带上进行频率切换,并且在1mhz偏移时相位噪声小于- 114 dBc/Hz。该合成器采用0.13 μ m CMOS技术,在1.2 V电源下功耗为135 mW,仅占用1.3 mm2的硅面积。
Fast hopping carrier generation for 14-band multi-band OFDM UWB in digital CMOS
A 14-band frequency synthesizer for MB-OFDM UWB using an inductor-less design methodology is presented. It is capable of frequency switching across the entire UWB band in approximately 2 nS, and the phase noise is less than −114 dBc/Hz at 1 MHz offset. Implemented in a 0.13µm CMOS technology, the synthesizer dissipates 135 mW from a 1.2 V supply, and occupies only 1.3 mm2 of silicon area.