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2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)最新文献

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SiGe HBT amplifiers with high image rejection for quasi-millimeter-wave frequency range 具有准毫米波频率范围高图像抑制的SiGe HBT放大器
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422962
T. Masuda, N. Shiramizu, Takahiro Nakamura, K. Washio
{"title":"SiGe HBT amplifiers with high image rejection for quasi-millimeter-wave frequency range","authors":"T. Masuda, N. Shiramizu, Takahiro Nakamura, K. Washio","doi":"10.1109/SMIC.2010.5422962","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422962","url":null,"abstract":"24-GHz band amplifiers with a high image-rejection function have been designed and characterized using a 0.18-µm SiGe BiCMOS technology. To achieve a higher image-rejection ratio (IRR) in the quasi-millimeter-wave frequency region, an amplifier configuration with a notch-filter type feedback circuit has been proposed. A low noise amplifier (LNA) and a driver amplifier (DA) were developed to eliminate the image-frequency signal for super-heterodyne transceivers. The LNA obtained a 16.5-dB gain, 5.9-dB NF at 24 GHz and a more than 40-dB IRR at a frequency of 18.5 GHz. The power consumption was 8.4 mW with a 1.4-V power supply. The DA also achieved a 6.5-dB gain at 24 GHz and a 40-dB IRR at 16 GHz. Moreover, large-signal characteristics such as an OP1dB of +1.4 dBm and an OIP3 of +15 dBm were obtained for a power consumption of 15 mW with a 1.5-V power supply. The large-signal capability of the IRR was also experimentally confirmed.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":" 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120830507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A differential 77-GHz receiver with current re-use low-noise amplifier in SiGe technology SiGe技术中带电流复用低噪声放大器的差分77 ghz接收机
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422956
D. Kissinger, H. Forstner, H. Jager, L. Maurer, R. Weigel
{"title":"A differential 77-GHz receiver with current re-use low-noise amplifier in SiGe technology","authors":"D. Kissinger, H. Forstner, H. Jager, L. Maurer, R. Weigel","doi":"10.1109/SMIC.2010.5422956","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422956","url":null,"abstract":"This paper presents a differential current re-use stacked double common-emitter stage low-noise amplifier and corresponding receiver frontend for 77 GHz automotive radar systems. Both circuits have been manufactured in an improved SiGe:C HBT technology with ft/fmax = 200/250 GHz and can operate in differential or single-ended mode. The receiver shows a gain of 24.5 dB and single sideband noise figure of 15.8 dB. The gain and noise figure of the LNA in single-ended mode are 12 dB and 9.5 dB respectively, suggesting a differential noise figure of approximately 6.5 dB.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127511390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A CMOS class-A 65nm power amplifier for 60 GHz applications 60 GHz应用的CMOS A级65nm功率放大器
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422847
T. Quemerais, L. Moquillon, S. Pruvost, J. Fournier, P. Benech, N. Corrao
{"title":"A CMOS class-A 65nm power amplifier for 60 GHz applications","authors":"T. Quemerais, L. Moquillon, S. Pruvost, J. Fournier, P. Benech, N. Corrao","doi":"10.1109/SMIC.2010.5422847","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422847","url":null,"abstract":"A millimeter-wave power amplifier (PA) implemented in a 65 nm CMOS process with 8-metal layers and transistor fT/fMAX of 160/200 GHz is reported. The PA operates from a 1.2 V supply voltage. A power gain of 13.4 dB, an output P1dB of 12.2 dBm with 7.6 % PAE and a saturated output power of 13.8 dBm at 58 GHz are measured. S11 and S22 are lower than 10 dB, which ensures an input and output matching to a 50 ¿ impedance. These results are obtained thanks to accurate millimeter wave models for MOS and integrated microstrip lines used as passive components. The amplifier design takes electromigration constraints at 105°C into account. Excellent agreement between measurement and simulation results is observed.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"10 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129964242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Challenges and opportunities for RF-MEMS in aeronautics and space - The EADS perspective RF-MEMS在航空航天领域的挑战与机遇——EADS的观点
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422985
V. Ziegler, W. Gautier, A. Stehle, B. Schoenlinner, U. Prechtel
{"title":"Challenges and opportunities for RF-MEMS in aeronautics and space - The EADS perspective","authors":"V. Ziegler, W. Gautier, A. Stehle, B. Schoenlinner, U. Prechtel","doi":"10.1109/SMIC.2010.5422985","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422985","url":null,"abstract":"This paper presents an overview on the opportunities and challenges for RF-MEMS based microwave circuits in the aeronautic and space domain. The most promising applications, like passive phased array antennas, active phased array antennas and reconfigurable systems are discussed and their different requirements in terms of performance and reliability are highlighted. Several RF-MEMS demonstrators already built and achievements made by EADS InnovationWorks are presented.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130780046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
Towards the development of terahertz substrate integrated circuit technology 走向太赫兹基片集成电路技术的发展
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422993
K. Wu
{"title":"Towards the development of terahertz substrate integrated circuit technology","authors":"K. Wu","doi":"10.1109/SMIC.2010.5422993","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422993","url":null,"abstract":"This paper begins with an overview of the state-of-the-art of substrate integrated circuits (SICs) that have been under intensive research and development since more than one decade. The attractiveness and popularity of this emerging technological platform now become more and more apparent for microwave and millimeter-wave system design as well as microwave photonic applications. Thanks to the current processing technology advancement such as enabling TSV 3-D Silicon techniques and material research progress such as nanostructured and subwavelength plasmonics, the underlying features and advantages of SICs allow us to anticipate and extrapolate their application trends towards higher end of frequency spectrum, that is, terahertz frequency range where no tangible integrated circuits technology is available to date. Interestingly, SICs may find itself as the next generation of high-frequency integrated circuits on the basis of their historical development path starting from the hollow rectangular waveguide. Challenging issues and future directions are discussed for terahertz applications, pointing to a potentially cost-effective and performance-promising ICs solution for mass commercial applications.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125444817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 19
Rapid modeling and efficient characterization of shielded oval-shaped spiral inductors 屏蔽椭圆型螺旋电感的快速建模和高效表征
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422827
Ioannis Alam, P. Papadopoulos, S. Stefanou, K. Nikellis
{"title":"Rapid modeling and efficient characterization of shielded oval-shaped spiral inductors","authors":"Ioannis Alam, P. Papadopoulos, S. Stefanou, K. Nikellis","doi":"10.1109/SMIC.2010.5422827","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422827","url":null,"abstract":"A rapid CAD technique is presented for accurately modeling oval (stadium) shaped inductors with various shielding schemes, which features rapid simulation speed (in the range of few seconds per spiral) and significantly enhanced capacity compared to conventional electromagnetic simulation tools. Inaccuracies inherent in popular measurement and de-embedding methods are discussed and effectively factored out by using the proposed modeling approach to include polysilicon shield patterns and interconnect leads to the device model. The proposed technique is found to yield a model to measurement correlation averaging 2.9% in low frequency inductance and 3% in self-resonance frequency, for an array of inductors fabricated in an 180nm 5-metal CMOS process.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125080776","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Novel BiST methods for parametric test in wireless transceivers 无线收发器参数测试的BiST新方法
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422977
D. Webster, G. Thiagarajan, S. Ramakrishnan, S. Gunturi, A. Sontakke, D. Lie
{"title":"Novel BiST methods for parametric test in wireless transceivers","authors":"D. Webster, G. Thiagarajan, S. Ramakrishnan, S. Gunturi, A. Sontakke, D. Lie","doi":"10.1109/SMIC.2010.5422977","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422977","url":null,"abstract":"This paper describes RF Built-in Self Test (BiST) techniques to test the performance of a RF CMOS integrated wireless transceiver using on-chip digital resources as both the stimuli and response analyzer. Using a defect-oriented approach, key RF blocks as well as the overall functionality and performance of the device are analyzed using a combination of block level and loopback testing. Using these methods, contributors to Error Vector Magnitude (EVM) such as amplifier gain, phase noise, and linearity performance (IP3) can be estimated and collected to predict the functional performance of a Digital Radio Processor (DRP) for wireless applications.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"441 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121853093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Small-size low losses GSM and DCS harmonic filters integrated in a low cost 130 nm high resistivity SOI CMOS technology 小尺寸低损耗GSM和DCS谐波滤波器集成在低成本130纳米高电阻率SOI CMOS技术
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422952
F. Gianesello, C. Durand, O. Bon, D. Gloria, B. Rauber, C. Raynaud
{"title":"Small-size low losses GSM and DCS harmonic filters integrated in a low cost 130 nm high resistivity SOI CMOS technology","authors":"F. Gianesello, C. Durand, O. Bon, D. Gloria, B. Rauber, C. Raynaud","doi":"10.1109/SMIC.2010.5422952","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422952","url":null,"abstract":"RF front end modules (FEMs) are currently realized using a variety of technologies. However, since integration drives wireless business in order to achieve the appropriate cost and form factor, we see significant research concerning FEM integration on silicon [1]. In this quest, SOI technology has already addressed two key blocks, the antenna switch and the power amplifier. In this paper, we will focus our investigation on high performance passives functions in order to demonstrate the capability of SOI CMOS technology to integrate the whole FEM. To do so, GSM and DCS harmonic filters have been achieved in a 130 nm SOI CMOS technology. Measured performances (insertion losses ∼1dB and harmonic rejection greater than 30 dB) are clearly competitive with most commercially available Integrated Device Passive (IPD) solutions.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115215396","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Millimeter wave MOSFET amplitude detector 毫米波MOSFET振幅检测器
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422961
S. Rami, W. Tuni, W. Eisenstadt
{"title":"Millimeter wave MOSFET amplitude detector","authors":"S. Rami, W. Tuni, W. Eisenstadt","doi":"10.1109/SMIC.2010.5422961","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422961","url":null,"abstract":"A comprehensive analysis of a wideband MOSFET amplitude detector for Built-In-Self-Test is presented under multiple operating conditions. A simplified RF-to-DC conversion equation for detection in the saturation region is derived. Two conversion modes are uncovered in the subthreshold operation region. The first mode, which applies to relatively large input signal levels, has linear RF-to-DC proportionality. The second subthreshold mode, for small signal levels, has square-law proportionality. The body effect was investigated in the saturation region and subthreshold's two modes. Detection in the triode is also discussed. A bandwidth equation accounting for the detector's loading effects on the circuit-under-test is introduced.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115271507","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
64 to 86 GHz VCO utilizing push-push frequency doubling in a 80 GHz fT SiGe HBT technology 64至86 GHz压控振荡器，采用80 GHz fT SiGe HBT技术的推推倍频
2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI: 10.1109/SMIC.2010.5422845
Gang Liu, A. Ulusoy, A. Trasser, H. Schumacher
{"title":"64 to 86 GHz VCO utilizing push-push frequency doubling in a 80 GHz fT SiGe HBT technology","authors":"Gang Liu, A. Ulusoy, A. Trasser, H. Schumacher","doi":"10.1109/SMIC.2010.5422845","DOIUrl":"https://doi.org/10.1109/SMIC.2010.5422845","url":null,"abstract":"In this paper, the authors present a VCO/doubler IC with an output frequency near the maximum frequency of oscillation of the technology used. The IC operates from 64 GHz to 86 GHz with a maximum output power of -3.4 dBm at 79 GHz. It is designed using an 0.8 ¿m SiGe HBT technology with fT/fmax of 80/90 GHz. The high frequency of operation is achieved by push-push frequency doubling. -4.5 dBm output at 87.1 GHz was reached by increasing the supply voltage. To the authors' knowledge, a frequency generation IC operating so close to fmax with comparably wide tuning range and high output power has not yet been reported.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130008995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
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