{"title":"64 to 86 GHz VCO utilizing push-push frequency doubling in a 80 GHz fT SiGe HBT technology","authors":"Gang Liu, A. Ulusoy, A. Trasser, H. Schumacher","doi":"10.1109/SMIC.2010.5422845","DOIUrl":null,"url":null,"abstract":"In this paper, the authors present a VCO/doubler IC with an output frequency near the maximum frequency of oscillation of the technology used. The IC operates from 64 GHz to 86 GHz with a maximum output power of -3.4 dBm at 79 GHz. It is designed using an 0.8 ¿m SiGe HBT technology with fT/fmax of 80/90 GHz. The high frequency of operation is achieved by push-push frequency doubling. -4.5 dBm output at 87.1 GHz was reached by increasing the supply voltage. To the authors' knowledge, a frequency generation IC operating so close to fmax with comparably wide tuning range and high output power has not yet been reported.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2010.5422845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15
Abstract
In this paper, the authors present a VCO/doubler IC with an output frequency near the maximum frequency of oscillation of the technology used. The IC operates from 64 GHz to 86 GHz with a maximum output power of -3.4 dBm at 79 GHz. It is designed using an 0.8 ¿m SiGe HBT technology with fT/fmax of 80/90 GHz. The high frequency of operation is achieved by push-push frequency doubling. -4.5 dBm output at 87.1 GHz was reached by increasing the supply voltage. To the authors' knowledge, a frequency generation IC operating so close to fmax with comparably wide tuning range and high output power has not yet been reported.