64 to 86 GHz VCO utilizing push-push frequency doubling in a 80 GHz fT SiGe HBT technology

Gang Liu, A. Ulusoy, A. Trasser, H. Schumacher
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引用次数: 15

Abstract

In this paper, the authors present a VCO/doubler IC with an output frequency near the maximum frequency of oscillation of the technology used. The IC operates from 64 GHz to 86 GHz with a maximum output power of -3.4 dBm at 79 GHz. It is designed using an 0.8 ¿m SiGe HBT technology with fT/fmax of 80/90 GHz. The high frequency of operation is achieved by push-push frequency doubling. -4.5 dBm output at 87.1 GHz was reached by increasing the supply voltage. To the authors' knowledge, a frequency generation IC operating so close to fmax with comparably wide tuning range and high output power has not yet been reported.
64至86 GHz压控振荡器,采用80 GHz fT SiGe HBT技术的推推倍频
在本文中,作者提出了一种输出频率接近所使用技术的最大振荡频率的VCO/倍频IC。该IC工作频率为64 GHz ~ 86 GHz, 79 GHz时最大输出功率为-3.4 dBm。它采用0.8 m SiGe HBT技术设计,fT/fmax为80/90 GHz。通过推-推倍频实现高工作频率。通过增加电源电压,在87.1 GHz时达到-4.5 dBm输出。据作者所知,频率产生IC工作如此接近fmax,具有相当宽的调谐范围和高输出功率尚未报道。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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