D. Kissinger, H. Forstner, H. Jager, L. Maurer, R. Weigel
{"title":"SiGe技术中带电流复用低噪声放大器的差分77 ghz接收机","authors":"D. Kissinger, H. Forstner, H. Jager, L. Maurer, R. Weigel","doi":"10.1109/SMIC.2010.5422956","DOIUrl":null,"url":null,"abstract":"This paper presents a differential current re-use stacked double common-emitter stage low-noise amplifier and corresponding receiver frontend for 77 GHz automotive radar systems. Both circuits have been manufactured in an improved SiGe:C HBT technology with ft/fmax = 200/250 GHz and can operate in differential or single-ended mode. The receiver shows a gain of 24.5 dB and single sideband noise figure of 15.8 dB. The gain and noise figure of the LNA in single-ended mode are 12 dB and 9.5 dB respectively, suggesting a differential noise figure of approximately 6.5 dB.","PeriodicalId":404957,"journal":{"name":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A differential 77-GHz receiver with current re-use low-noise amplifier in SiGe technology\",\"authors\":\"D. Kissinger, H. Forstner, H. Jager, L. Maurer, R. Weigel\",\"doi\":\"10.1109/SMIC.2010.5422956\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a differential current re-use stacked double common-emitter stage low-noise amplifier and corresponding receiver frontend for 77 GHz automotive radar systems. Both circuits have been manufactured in an improved SiGe:C HBT technology with ft/fmax = 200/250 GHz and can operate in differential or single-ended mode. The receiver shows a gain of 24.5 dB and single sideband noise figure of 15.8 dB. The gain and noise figure of the LNA in single-ended mode are 12 dB and 9.5 dB respectively, suggesting a differential noise figure of approximately 6.5 dB.\",\"PeriodicalId\":404957,\"journal\":{\"name\":\"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"volume\":\"53 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2010.5422956\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2010.5422956","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A differential 77-GHz receiver with current re-use low-noise amplifier in SiGe technology
This paper presents a differential current re-use stacked double common-emitter stage low-noise amplifier and corresponding receiver frontend for 77 GHz automotive radar systems. Both circuits have been manufactured in an improved SiGe:C HBT technology with ft/fmax = 200/250 GHz and can operate in differential or single-ended mode. The receiver shows a gain of 24.5 dB and single sideband noise figure of 15.8 dB. The gain and noise figure of the LNA in single-ended mode are 12 dB and 9.5 dB respectively, suggesting a differential noise figure of approximately 6.5 dB.