Towards the development of terahertz substrate integrated circuit technology

K. Wu
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引用次数: 19

Abstract

This paper begins with an overview of the state-of-the-art of substrate integrated circuits (SICs) that have been under intensive research and development since more than one decade. The attractiveness and popularity of this emerging technological platform now become more and more apparent for microwave and millimeter-wave system design as well as microwave photonic applications. Thanks to the current processing technology advancement such as enabling TSV 3-D Silicon techniques and material research progress such as nanostructured and subwavelength plasmonics, the underlying features and advantages of SICs allow us to anticipate and extrapolate their application trends towards higher end of frequency spectrum, that is, terahertz frequency range where no tangible integrated circuits technology is available to date. Interestingly, SICs may find itself as the next generation of high-frequency integrated circuits on the basis of their historical development path starting from the hollow rectangular waveguide. Challenging issues and future directions are discussed for terahertz applications, pointing to a potentially cost-effective and performance-promising ICs solution for mass commercial applications.
走向太赫兹基片集成电路技术的发展
本文首先概述了衬底集成电路(sic)的发展现状,这是十多年来一直在深入研究和发展的。这一新兴技术平台对微波和毫米波系统设计以及微波光子应用的吸引力和普及程度越来越明显。由于当前的加工技术进步,如使TSV 3-D硅技术和材料研究进展,如纳米结构和亚波长等离子体,sic的潜在特征和优势使我们能够预测和推断其在频谱高端的应用趋势,即太赫兹频率范围,迄今为止没有有形的集成电路技术可用。有趣的是,基于其从空心矩形波导开始的历史发展路径,sic可能会发现自己是下一代高频集成电路。讨论了太赫兹应用的挑战问题和未来方向,指出了大规模商业应用的潜在成本效益和性能前景良好的集成电路解决方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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