RF-MEMS电容开关介质充电建模研究

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI:10.1109/SMIC.2010.5422970

G. Papaioannou, F. Coccetti, R. Plana

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引用次数: 37

摘要

建立了射频MEMS电容开关的介电充电模型。模拟的重点是电荷注入过程，计算从第一性原理出发。对缺陷均匀分布和指数分布的材料进行了计算。推导了注入电荷分布的时间依赖性和偏置依赖性。推导出了介质的充电/极化积累服从拉伸指数定律，这一结果得到了各种介质实验数据的支持。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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On the modeling of dielectric charging in RF-MEMS capacitive switches

The dielectric charging in RF MEMS capacitive switches is modeled. The modeling focus on charge injections processes and the calculations start from first principles. The calculations were performed on materials with uniform and exponential distribution of defects. The time and bias dependence of distribution of injected charges are derived. The dielectric charging/polarization build-up is derived and found to obey the stretched exponential law, a result being supported by experimental data in various dielectrics.

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来源期刊

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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