On the modeling of dielectric charging in RF-MEMS capacitive switches

Abstract

The dielectric charging in RF MEMS capacitive switches is modeled. The modeling focus on charge injections processes and the calculations start from first principles. The calculations were performed on materials with uniform and exponential distribution of defects. The time and bias dependence of distribution of injected charges are derived. The dielectric charging/polarization build-up is derived and found to obey the stretched exponential law, a result being supported by experimental data in various dielectrics.