用于M-QAM载波恢复的SiGe频率四倍器

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI:10.1109/SMIC.2010.5422848

A. Ulusoy, Gang Liu, A. Trasser, H. Schumacher

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引用次数: 10

摘要

本文提出了一种集成了商用SiGe HBT技术(fT/fmax¿80/90 GHz)的四倍频电路。四倍器由两个堆叠成正方形的吉尔伯特单元混频器组成。当输入电平为-9 dBm时，测量到的最大转换增益为0.6 dB。该电路针对M-QAM载波恢复进行了优化，并通过输入速率为4gbit /s的QPSK和16QAM调制信号对其性能进行了测试。给出了实验和仿真结果。完全集成的芯片由单个2.5V直流电源操作，并吸取22.3 mA电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A SiGe frequency quadrupler for M-QAM carrier recovery

In this paper a frequency quadrupler circuit, integrated with a commercially available SiGe HBT technology (fT/fmax¿80/90 GHz) is presented. The quadrupler consists of two Gilbert cell mixers stacked as squarers. The measured maximum conversion gain is 0.6 dB for an input level of -9 dBm. The circuit is optimized for M-QAM carrier recovery, and the performance was tested by applying QPSK and 16QAM modulated signals with 4 Gbit/s data rate at the input. Both experimental and simulated results are presented. The fully integrated chip is operated from a single 2.5V DC supply and draws 22.3 mA current.

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2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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