Silicon substrate integration of BST based tunable TFBARs using all-dielectric SiO2/AlN Bragg reflectors

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Pub Date : 2010-03-01 DOI:10.1109/SMIC.2010.5422942

A. Vorobiev, J. Berge, M. Norling, S. Gevorgian

引用次数: 3

Abstract

Integration possibilities of BaxSr1-xTiO3 (BST) based tunable Thin Film Bulk Acoustic Wave Resonators (TFBAR) using all-dielectric SiO2/AlN Bragg reflectors deposited on a high resistivity silicon strate are considered. SiO2/AlN reflectors withstand the high deposition temperature (≫600C) of the BST films opening up possibilities for heterogeneous integration of complex microwave circuits.

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使用全介质SiO2/AlN Bragg反射器的基于BST的可调谐tfbar的硅衬底集成

考虑了在高电阻率硅衬底上沉积全介质SiO2/AlN Bragg反射器的基于BaxSr1-xTiO3 (BST)的可调谐薄膜体声波谐振器(TFBAR)的集成可能性。SiO2/AlN反射镜可以承受BST薄膜的高沉积温度(> 600C)，为复杂微波电路的非均质集成开辟了可能性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)

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