IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers最新文献

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A 12 b 500 ns subranging ADC a12b500ns分段ADC
M. Kolluri
{"title":"A 12 b 500 ns subranging ADC","authors":"M. Kolluri","doi":"10.1109/ISSCC.1989.48215","DOIUrl":"https://doi.org/10.1109/ISSCC.1989.48215","url":null,"abstract":"The author describes a 12-b, 500-ns subranging A/D (analog/digital) converter which includes a voltage reference, a clock generator, and full microprocessor-bus-interface control logic. The subranging architecture includes analog and digital correction, which reduces the accuracy requirements of the reference levels and the comparator offsets in the quantizers. The circuit is fabricated on an 8-GHz-/sub fT/, 2- mu m oxide-isolated bipolar process and uses TiW fuses to trim the nonlinearity of the DACs (digital/analog converters), the voltage reference, and the full scale and zero scale of the A/D. In the present implementation of subranging with correction, the subtraction DACs need not settle to 12-b precision before the comparators in the next quantizer are strobed, except in the final step. The digital encoding and correction logic path is separate from the analog signal path. The logic power consumption is kept low since the delay through this path does not affect conversion speed. The circuit topology and the process capabilities have resulted in a 500-ns 12-b A/D converter dissipating 600 mW in 39k mil/sup 2/. A block diagram of the A/D implementation is shown.<<ETX>>","PeriodicalId":385838,"journal":{"name":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","volume":"36 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114026379","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
200 Mb wafer memory 200mb晶圆存储器
N. MacDonald, G. Neish, A. Sinclair, F. Baba, T. Tatematsu, K. Hirawa, K. Miyasaka
{"title":"200 Mb wafer memory","authors":"N. MacDonald, G. Neish, A. Sinclair, F. Baba, T. Tatematsu, K. Hirawa, K. Miyasaka","doi":"10.1109/ISSCC.1989.48272","DOIUrl":"https://doi.org/10.1109/ISSCC.1989.48272","url":null,"abstract":"The realization of a high-capacity whole-wafer memory is described, including wafer configuration, chip architecture, process technology, and performance. The wafer is essentially a single-ported serial memory device. An innovative concept which utilizes any defective chips free from power failures has made possible a high-yield wafer-scale memory. The wafer includes an array of chips which have a DRAM (dynamic RAM) core and additional control logic known as the configuration logic (Conlog). Each Conlog is connected to its four neighbors by signal lines, which form logic networks on the wafer. An external controller transmits commands to each Conlog element to set up links between chips and configure a single contiguous data path known as a spiral. The spiral is configured on completion of wafer processing by external control software which implements chip test and linking of chips as a single-shaped data-flow chain. The DRAM core and Conlog are designed using a standard 1-Mb DRAM fabricated by the 1.3- mu m CMOS process. The waveform of the internal clock and output of the DRAM are shown as well as the output waveform of the receive terminal of Conlog.<<ETX>>","PeriodicalId":385838,"journal":{"name":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114297062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 1/3" format image sensor with refractory metal light shield for color video applications 一种1/3”格式的图像传感器,带有耐火金属遮光罩,适用于彩色视频应用
D. Losee, J. C. Cassidy, M. Mehra, E. Nelson, B. Burkey, G. Geisbuesch, G. Hawkins, R. Khosla, J. P. Lavine, W. Mccolgin, E. A. Trabka, A.K. Weiss
{"title":"A 1/3\" format image sensor with refractory metal light shield for color video applications","authors":"D. Losee, J. C. Cassidy, M. Mehra, E. Nelson, B. Burkey, G. Geisbuesch, G. Hawkins, R. Khosla, J. P. Lavine, W. Mccolgin, E. A. Trabka, A.K. Weiss","doi":"10.1109/ISSCC.1989.48194","DOIUrl":"https://doi.org/10.1109/ISSCC.1989.48194","url":null,"abstract":"The authors report results obtained on a full-color interline transfer CCD (charged-coupled device) image sensor with pixel dimensions of 8.6 mu m(H)*6.8 mu m(V) using 1.2- mu m design rules and a two-phase, single-polysilicon-per-phase technology. In order to reduce image smear and to provide suitable topography for integral color filters, a refractory light shield with a flowed glass overlayer was incorporated. The basic sensor and pixel architecture is shown. Image smear as a percent of full well, measured with 10% vertical illumination at saturated intensity, is shown as a function of wavelength. Smear is lowest at short wavelengths but is at an acceptable level for applications with controlled illumination.<<ETX>>","PeriodicalId":385838,"journal":{"name":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132257007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
An ISDN echo-cancelling transceiver chip for 2B1Q coded U-interface 用于2B1Q编码u接口的ISDN回波消除收发器芯片
Y. Takahashi, M. Takahara, T. Makabe, D. Inami, M. Ohno, F. Nakagawa, T. Koyama, A. Kanemasa, M. Chatani, R. Ikeda
{"title":"An ISDN echo-cancelling transceiver chip for 2B1Q coded U-interface","authors":"Y. Takahashi, M. Takahara, T. Makabe, D. Inami, M. Ohno, F. Nakagawa, T. Koyama, A. Kanemasa, M. Chatani, R. Ikeda","doi":"10.1109/ISSCC.1989.48280","DOIUrl":"https://doi.org/10.1109/ISSCC.1989.48280","url":null,"abstract":"A 5-V CMOS chip set used for an integrated services digital network (ISDN) U-interface transceiver is described which accomplishes 2B+D channel (144-kb/s) transmission using a 2B1Q line code based on echo cancellation over existing two-wire subscriber loops. The three-chip set consists of an analog front end (AFE), an echo canceler (ECD) and a receiver (RCV). The last two are digital signal processors. The AFE has been fabricated in double-polysilicon double-metal 1.6 mu m CMOS technology. The chip size is 7.5 mm*6.5 mm. The EC and RCV have been fabricated in double-metal 1.2- mu m CMOS technology using a standard-cell design. The chip sizes are 8.2 mm*8.2 mm and 8.5 mm*8.1 mm, respectively. Total power consumption of the chip set is 580 mW with a single 5-V supply.<<ETX>>","PeriodicalId":385838,"journal":{"name":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","volume":"193 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133945010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A 50 MHz 24 b floating-point DSP 一个50mhz 24b浮点DSP
Y. Shimazu, T. Kengaku, T. Fujiyama, E. Teraoka, T. Ohno, T. Tokuda, O. Tomisawa, S. Tsujimichi
{"title":"A 50 MHz 24 b floating-point DSP","authors":"Y. Shimazu, T. Kengaku, T. Fujiyama, E. Teraoka, T. Ohno, T. Tokuda, O. Tomisawa, S. Tsujimichi","doi":"10.1109/ISSCC.1989.48226","DOIUrl":"https://doi.org/10.1109/ISSCC.1989.48226","url":null,"abstract":"A 24-bit floating-point digital signal processor (DSP) has been developed primarily for speech processing and communication applications. The chip uses 1.0- mu m double-metal CMOS with tungsten silicide technology. The instruction set is upward compatible with an 18-bit DSP. Novel circuit design techniques allowing 40-ns machine cycle time at 50-MHz clock and less than 600-mW power dissipation are described. A built-in self-test is prepared using on-chip IROM and the two 24-bit linear feedback shift registers which are included in I/O registers such as the data register, the serial input registers, and the serial output registers. The DSP design features are summarized.<<ETX>>","PeriodicalId":385838,"journal":{"name":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","volume":"12 s3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132390297","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A self calibration technique for monolithic high-resolution D/A converters 单片高分辨率D/A转换器的自校准技术
D. Groeneveld, H. Schouwenaars, H. Termeer, C. Bastiaansen
{"title":"A self calibration technique for monolithic high-resolution D/A converters","authors":"D. Groeneveld, H. Schouwenaars, H. Termeer, C. Bastiaansen","doi":"10.1109/ISSCC.1989.48217","DOIUrl":"https://doi.org/10.1109/ISSCC.1989.48217","url":null,"abstract":"A D/A (digital/analog) and A/D (analog/digital) self-calibrated technique is presented which does not need a calibration period, additional trimming, or external component and is insensitive to process variations. The technique is based on calibration of a current source. The basic block diagram of a 16-bit D/A converter is shown. The common calibration circuitry is also presented. The measured signal-to-noise ratio, including harmonic distortion, versus the output voltage of the 16-bit DAC is shown.<<ETX>>","PeriodicalId":385838,"journal":{"name":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132405032","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 215
A 30 MIPS VLSI CPU 30 MIPS vlsi CPU
B.D. Boschma, D.M. Burns, R. Chin, N.S. Fiduccia, C. Hu, M.J. Reed, T.I. Rueth, F.X. Schumacher, V. Shen
{"title":"A 30 MIPS VLSI CPU","authors":"B.D. Boschma, D.M. Burns, R. Chin, N.S. Fiduccia, C. Hu, M.J. Reed, T.I. Rueth, F.X. Schumacher, V. Shen","doi":"10.1109/ISSCC.1989.48191","DOIUrl":"https://doi.org/10.1109/ISSCC.1989.48191","url":null,"abstract":"A description is given of a VLSI CPU which implements an existing 32-b architecture with a set of 140 instructions, most of which can be executed within one effective clock cycle. The device is fabricated in an nMOS process with three metal layers having minimum metal-1 line width of 1.5 mu m and drawn device lengths of 1.7 mu m. The die, containing 183000 transistors, is 1.4 cm*1.4 cm. The CPU directly addresses external SRAMs organized as a two-way set-associative split 512-kb-instruction/512-kb-data cache. Separate instruction and data paths allow for concurrent overlapped cache memory access. Chip specifications are presented, and the CPU data path is shown.<<ETX>>","PeriodicalId":385838,"journal":{"name":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125228750","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A 16 MBPS adapter chip for the token-ring local area network 用于令牌环局域网的16 MBPS适配器芯片
J. D. Blair, A. Correale, C. Cranford, D. A. Dombrowski, C.F. Erdelyi, C. R. Hoffman, J. L. Lamphere, K. W. Lang, J.K. Lee, M. Mullen, R.R. Norman, S.F. Oakland
{"title":"A 16 MBPS adapter chip for the token-ring local area network","authors":"J. D. Blair, A. Correale, C. Cranford, D. A. Dombrowski, C.F. Erdelyi, C. R. Hoffman, J. L. Lamphere, K. W. Lang, J.K. Lee, M. Mullen, R.R. Norman, S.F. Oakland","doi":"10.1109/ISSCC.1989.48239","DOIUrl":"https://doi.org/10.1109/ISSCC.1989.48239","url":null,"abstract":"An adaptor chip is described which is the result of a cost-reduction and function-enhancement project that yielded a single CMOS VLSI module capable of performing all major LAN (local area network) adapter functions and supporting a 16-Mb/s data rate. The chip when combined with external PROM and RAM modules, bus drivers, and discrete line interface components, forms a complete token-ring adapter. The protocol handler performs most bit- and byte-level functions required to implement the IEEE 802.5 protocol and contains rate machines which automatically perform frame-transmit and receive operations directly between the network and the adapter RAM. The design of the chip uses a mix of fully custom and standard cell approaches. Two process enhancements were employed in a standard digital process in order to achieve high-performance analog functions: a high-implant thin-oxide capacitor and a low-threshold n-channel transistor.<<ETX>>","PeriodicalId":385838,"journal":{"name":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","volume":"15 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130077481","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A mixed analog-digital secondary channel FSK modem 混合模拟-数字副通道FSK调制解调器
C. Chen, E. Huang, B. White
{"title":"A mixed analog-digital secondary channel FSK modem","authors":"C. Chen, E. Huang, B. White","doi":"10.1109/ISSCC.1989.48284","DOIUrl":"https://doi.org/10.1109/ISSCC.1989.48284","url":null,"abstract":"The authors describe a fully integrated circuit that performs the functions of a 75-b/s narrowband FSK (frequency-shift-keying) modem, along with the necessary filtering functions to provide greater than 30-dB channel separation between FSK and QAM (quadrature amplitude-modulation) signals. Switched-capacity circuits are used extensively to implement the QAM filters and the FSK transmitter, and a reduced-instruction-set digital signal processor is employed to realize the FSK receiver. An important aspect of the digital filters realized on the chip is that each multiplier coefficient is optimized to have fewer than three nonzero bits in the signed-digit representation. With layout precautions and separate bonding pads for voltage supplies, the crosstalk between QAM and FSK signals and the coupling of the signal processor switching noise into analog signals are minimized. Less than 0.5 dB performance degradation of signal-to-noise ratio with 10/sup -6/ bit-error rate is introduced for 19.2-kb/s modems. The chip is fabricated with a 3- mu m, double-polysilicon, single-metal, p-well CMOS process.<<ETX>>","PeriodicalId":385838,"journal":{"name":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127757861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An 8 ns BiCMOS 1 Mb ECL SRAM with a configurable memory array size 一个8 ns BiCMOS 1 Mb ECL SRAM,具有可配置的存储器阵列大小
H. Tran, K. Fung, D. Bell, R. Chapman, M. Harward, T. Suzuki, R. Havemann, R. Eklund, R. Fleck, D. Le, C. Wei, N. Iyengar, M. Rodder, R. Haken, D. Scott
{"title":"An 8 ns BiCMOS 1 Mb ECL SRAM with a configurable memory array size","authors":"H. Tran, K. Fung, D. Bell, R. Chapman, M. Harward, T. Suzuki, R. Havemann, R. Eklund, R. Fleck, D. Le, C. Wei, N. Iyengar, M. Rodder, R. Haken, D. Scott","doi":"10.1109/ISSCC.1989.48223","DOIUrl":"https://doi.org/10.1109/ISSCC.1989.48223","url":null,"abstract":"A 1-Mb*1 BiCMOS ECL (emitter-coupled-logic) I/O SRAM (static random access memory) is fabricated using a 0.8- mu m BiCMOS process. This memory device utilizes a 76- mu m/sup 2/ full-CMOS six-transistor memory cell, a dual-MOS current-source BiCMOS bit line sensing scheme, a BiCMOS current-source voltage reference network, and a low-capacitance load block line decoding circuit to achieve 8-ns access time. The configurable memory array size architecture allows for memory sizes from 64 kb up to 1 Mb in 64 kb increments with no change in the peripheral circuits. The six-transistor cell layout is shown, and the memory block architecture is illustrated. The low dependence of power supply current on the operating frequency shows the impact of ECL circuits in the design. Characteristics of the SRAM are summarized.<<ETX>>","PeriodicalId":385838,"journal":{"name":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1989-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127576863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
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