B.D. Boschma, D.M. Burns, R. Chin, N.S. Fiduccia, C. Hu, M.J. Reed, T.I. Rueth, F.X. Schumacher, V. Shen
{"title":"A 30 MIPS VLSI CPU","authors":"B.D. Boschma, D.M. Burns, R. Chin, N.S. Fiduccia, C. Hu, M.J. Reed, T.I. Rueth, F.X. Schumacher, V. Shen","doi":"10.1109/ISSCC.1989.48191","DOIUrl":null,"url":null,"abstract":"A description is given of a VLSI CPU which implements an existing 32-b architecture with a set of 140 instructions, most of which can be executed within one effective clock cycle. The device is fabricated in an nMOS process with three metal layers having minimum metal-1 line width of 1.5 mu m and drawn device lengths of 1.7 mu m. The die, containing 183000 transistors, is 1.4 cm*1.4 cm. The CPU directly addresses external SRAMs organized as a two-way set-associative split 512-kb-instruction/512-kb-data cache. Separate instruction and data paths allow for concurrent overlapped cache memory access. Chip specifications are presented, and the CPU data path is shown.<<ETX>>","PeriodicalId":385838,"journal":{"name":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","volume":"55 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-02-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE International Solid-State Circuits Conference, 1989 ISSCC. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.1989.48191","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
Abstract
A description is given of a VLSI CPU which implements an existing 32-b architecture with a set of 140 instructions, most of which can be executed within one effective clock cycle. The device is fabricated in an nMOS process with three metal layers having minimum metal-1 line width of 1.5 mu m and drawn device lengths of 1.7 mu m. The die, containing 183000 transistors, is 1.4 cm*1.4 cm. The CPU directly addresses external SRAMs organized as a two-way set-associative split 512-kb-instruction/512-kb-data cache. Separate instruction and data paths allow for concurrent overlapped cache memory access. Chip specifications are presented, and the CPU data path is shown.<>