200 Mb wafer memory

N. MacDonald, G. Neish, A. Sinclair, F. Baba, T. Tatematsu, K. Hirawa, K. Miyasaka
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引用次数: 7

Abstract

The realization of a high-capacity whole-wafer memory is described, including wafer configuration, chip architecture, process technology, and performance. The wafer is essentially a single-ported serial memory device. An innovative concept which utilizes any defective chips free from power failures has made possible a high-yield wafer-scale memory. The wafer includes an array of chips which have a DRAM (dynamic RAM) core and additional control logic known as the configuration logic (Conlog). Each Conlog is connected to its four neighbors by signal lines, which form logic networks on the wafer. An external controller transmits commands to each Conlog element to set up links between chips and configure a single contiguous data path known as a spiral. The spiral is configured on completion of wafer processing by external control software which implements chip test and linking of chips as a single-shaped data-flow chain. The DRAM core and Conlog are designed using a standard 1-Mb DRAM fabricated by the 1.3- mu m CMOS process. The waveform of the internal clock and output of the DRAM are shown as well as the output waveform of the receive terminal of Conlog.<>
200mb晶圆存储器
描述了高容量全晶圆存储器的实现,包括晶圆配置、芯片架构、工艺技术和性能。晶圆片本质上是一个单端口串行存储设备。利用任何有缺陷的芯片而不发生电源故障的创新概念使高产量的晶圆级存储器成为可能。晶圆包括一系列芯片,这些芯片具有DRAM(动态RAM)核心和称为配置逻辑(Conlog)的附加控制逻辑。每个Conlog通过信号线与相邻的四个节点相连,在晶圆上形成逻辑网络。外部控制器向每个Conlog元件发送命令,以在芯片之间建立链接,并配置一个称为螺旋的单一连续数据路径。在晶圆加工完成后,通过外部控制软件配置螺旋,实现芯片测试和芯片连接,形成单形数据流链。DRAM核心和Conlog采用1.3 μ m CMOS工艺制造的标准1mb DRAM设计。给出了内部时钟的波形和DRAM的输出,以及Conlog接收端的输出波形。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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