发布求助
文献互助 智能选刊 最新文献

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting最新文献

筛选
英文 中文
A low local input power 1.9 GHz Si-bipolar quadrature modulator without any adjustment 低本地输入功率1.9 GHz硅双极正交调制器，无需任何调整
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI: 10.1109/BIPOL.1994.587887
S. Otaka, T. Yamaji, R. Fujimoto, C. Takahashi, H. Tanimoto
{"title":"A low local input power 1.9 GHz Si-bipolar quadrature modulator without any adjustment","authors":"S. Otaka, T. Yamaji, R. Fujimoto, C. Takahashi, H. Tanimoto","doi":"10.1109/BIPOL.1994.587887","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587887","url":null,"abstract":"A 1.9 GHz quadrature modulator with on-chip 90/spl deg/ phase-shifter was fabricated in a silicon bipolar technology. An image-rejection ratio over 45 dB and a carrier feed-through below -40 dBc were attained at -15 dBm local input power from 2.7 V supply. A die size of quadrature modulator IC is 2.49 mm/spl times/2.14 mm.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128400093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The importance of including lattice self-heating and hot-carrier transport in BJT simulation 在BJT模拟中考虑晶格自热和热载流子输运的重要性
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI: 10.1109/BIPOL.1994.587891
M. Liang, M. E. Law
{"title":"The importance of including lattice self-heating and hot-carrier transport in BJT simulation","authors":"M. Liang, M. E. Law","doi":"10.1109/BIPOL.1994.587891","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587891","url":null,"abstract":"As the size of VLSI devices shrinks, lattice self-heating and hot-carrier transport effects become significant in their operation. As a result, the drift-diffusion model which ignores local heating and models the hot-carrier transport effects with simple local field-dependent relationships begins to fail. Simulations were performed to demonstrate how these effects affect device operation, and the importance of simultaneously including both effects in device simulation is discussed.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116836484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High Q inductors for wireless applications in a complementary silicon bipolar process 用于互补硅双极工艺无线应用的高Q电感器
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI: 10.1109/BIPOL.1994.587889
K. Ashby, I. Koullias, William C. Finley, J. Bastek, S. Moinian
{"title":"High Q inductors for wireless applications in a complementary silicon bipolar process","authors":"K. Ashby, I. Koullias, William C. Finley, J. Bastek, S. Moinian","doi":"10.1109/BIPOL.1994.587889","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587889","url":null,"abstract":"Rectangular spiral inductors with Q's as high as 12 have been built in a high-speed complementary bipolar process and characterized for use in wireless applications. An accurate broadband model has been developed for the inductors, and a test filter and mixer have been built to verify the performance of the inductors and the accuracy of the model.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129007609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 370
Comparison of polysilicon and silicon-carbon emitters with enhanced emitter efficiency 提高发射效率的多晶硅和硅碳发射体的比较
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI: 10.1109/BIPOL.1994.587863
C.H.H. Emons, R. Koster, D. Paxman, M. Theunissen
{"title":"Comparison of polysilicon and silicon-carbon emitters with enhanced emitter efficiency","authors":"C.H.H. Emons, R. Koster, D. Paxman, M. Theunissen","doi":"10.1109/BIPOL.1994.587863","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587863","url":null,"abstract":"Plasma-Enhanced CVD (PECVD) and Low-Pressure CVD (LPCVD) silicon-carbon emitters have been fabricated in the same transistor layout together with the best conventional implanted polysilicon emitters. In this way the first direct comparison of DC-transistor characteristics has been made. The highest emitter Gummel numbers are achieved for PECVD silicon-carbon emitters (up to 92*10/sup 12/ s/cm/sup 4/ compared to 66*10/sup 12/ s/cm/sup 4/ for the best implanted polysilicon emitter), whereas emitter series resistance is acceptably low (0.97*10/sup -6/ /spl Omega/*cm/sup 2/). Moreover, the thermal budget for emitter formation is extremely low (30 minutes at 750/spl deg/C).","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134098730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Process integration technology for low process complexity BiCMOS using trench collector sink 采用沟槽集电极的低工艺复杂度BiCMOS工艺集成技术
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI: 10.1109/BIPOL.1994.587901
H. Yoshida, H. Suzuki, Y. Kinoshita, K. Imai, T. Akimoto, K. Tokashiki, T. Yamazaki
{"title":"Process integration technology for low process complexity BiCMOS using trench collector sink","authors":"H. Yoshida, H. Suzuki, Y. Kinoshita, K. Imai, T. Akimoto, K. Tokashiki, T. Yamazaki","doi":"10.1109/BIPOL.1994.587901","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587901","url":null,"abstract":"A BiCMOS process integration technology featuring a W-plug trench collector sink simultaneously formed with an emitter defining step is presented. This technology can provide a low resistance collector sink without any additional process steps to form the collector sink and realizes a low cost 0.35 /spl mu/m BiCMOS device with only 11 photo-masks.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126723777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A new approach for extracting base width modulation parameters in bipolar transistors 双极晶体管基极宽度调制参数提取的新方法
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI: 10.1109/BIPOL.1994.587881
K. Joardar
{"title":"A new approach for extracting base width modulation parameters in bipolar transistors","authors":"K. Joardar","doi":"10.1109/BIPOL.1994.587881","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587881","url":null,"abstract":"A new dc measurement technique that allows a direct observation of the Early effects and the base push-out effect in vertical bipolar transistors is described. The technique uses a special test structure and may be used to accurately determine the forward and reverse Early voltages used in the Gummel Poon model. The improvements provided by this method over conventionally used parameter extraction techniques are demonstrated through measurements on silicon and through two-dimensional device simulations.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114867240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A high performance CBiCMOS with novel self-aligned vertical PNP transistors 一种新型自对准垂直PNP晶体管的高性能CBiCMOS
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI: 10.1109/BIPOL.1994.587903
T. Ikeda, T. Nakashima, S. Kubo, H. Jouba, M. Yamawaki
{"title":"A high performance CBiCMOS with novel self-aligned vertical PNP transistors","authors":"T. Ikeda, T. Nakashima, S. Kubo, H. Jouba, M. Yamawaki","doi":"10.1109/BIPOL.1994.587903","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587903","url":null,"abstract":"This paper describes a vertical PNP transistor with a novel self-aligned structure and a complementary BiCMOS process which makes use of it. The PNP's emitter electrode is formed at the same fabrication step as that of a self-aligned NPN's base electrode, and the base electrode is formed at the same fabrication step as that of the self-aligned NPN's emitter electrode. The PNPs have been fabricated adding only one photo-mask and one doping step to the BiCMOS processes. The maximum cutoff frequency or PNP and NPN transistors are 4.2 GHz and 20 GHz, respectively. The MOS transistors are compatible with simple CMOS devices.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115081715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Accuracy of series resistances extraction schemes for polysilicon bipolar transistors 多晶硅双极晶体管串联电阻提取方案的准确性
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI: 10.1109/BIPOL.1994.587883
E. Dubois, P. Bricout, E. Robilliart
{"title":"Accuracy of series resistances extraction schemes for polysilicon bipolar transistors","authors":"E. Dubois, P. Bricout, E. Robilliart","doi":"10.1109/BIPOL.1994.587883","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587883","url":null,"abstract":"In this work, two experimental methods used for the determination of the emitter and base series resistances are critically reviewed and compared to an accurate solution based on device simulations. In addition, the sensitivity of the series resistances on the potential barriers present at the emitter polysilicon/monocrystal interface is investigated.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122057194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Chip-level electro-thermal simulation of bipolar transistor circuits 芯片级双极晶体管电路的电热模拟
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI: 10.1109/BIPOL.1994.587877
S. Moinian, P. Feldmann, R. Melville
{"title":"Chip-level electro-thermal simulation of bipolar transistor circuits","authors":"S. Moinian, P. Feldmann, R. Melville","doi":"10.1109/BIPOL.1994.587877","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587877","url":null,"abstract":"This paper presents accurate electro-thermal circuit-level modeling of both self and mutual heating for bipolar transistor IC devices. In addition, thermal transmission line network models are used to characterize the important mutual heating among devices on a chip. The models have been implemented in a new electro-thermal analog circuit simulator, Sframe, with robust convergence due to parameter continuation methodology.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116874773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
The effect of bipolar transistor in the switching dynamics of IGBTs in resonant converter applications 双极晶体管对谐振变换器中igbt开关动力学的影响
Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI: 10.1109/BIPOL.1994.587880
H.H. Li, I. Widjaja, A. Kurnia, D. Divan, K. Shenai
{"title":"The effect of bipolar transistor in the switching dynamics of IGBTs in resonant converter applications","authors":"H.H. Li, I. Widjaja, A. Kurnia, D. Divan, K. Shenai","doi":"10.1109/BIPOL.1994.587880","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587880","url":null,"abstract":"This paper reports on extensive experimental and theoretical characteristics of Insulated Gate Bipolar Transistors (IGBTs) for resonant converter applications. It is shown that di/dt dependent dynamic forward voltage saturation occurs due to conductivity modulation lag in the drift region caused by high concentration of deep-level impurities. During turn-off, temperature and dv/dt dependent elevated tail current bump was measured that is caused by the minority carrier recombination effects in the drift region. The physical mechanisms causing this anomalous behavior are studied using advanced mixed device and circuit simulators. It is shown that bipolar carrier transport mechanisms place important constraints on tradeoff among the performance and Safe-Operating Area parameters.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132789043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信