S. Otaka, T. Yamaji, R. Fujimoto, C. Takahashi, H. Tanimoto
{"title":"A low local input power 1.9 GHz Si-bipolar quadrature modulator without any adjustment","authors":"S. Otaka, T. Yamaji, R. Fujimoto, C. Takahashi, H. Tanimoto","doi":"10.1109/BIPOL.1994.587887","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587887","url":null,"abstract":"A 1.9 GHz quadrature modulator with on-chip 90/spl deg/ phase-shifter was fabricated in a silicon bipolar technology. An image-rejection ratio over 45 dB and a carrier feed-through below -40 dBc were attained at -15 dBm local input power from 2.7 V supply. A die size of quadrature modulator IC is 2.49 mm/spl times/2.14 mm.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128400093","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"The importance of including lattice self-heating and hot-carrier transport in BJT simulation","authors":"M. Liang, M. E. Law","doi":"10.1109/BIPOL.1994.587891","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587891","url":null,"abstract":"As the size of VLSI devices shrinks, lattice self-heating and hot-carrier transport effects become significant in their operation. As a result, the drift-diffusion model which ignores local heating and models the hot-carrier transport effects with simple local field-dependent relationships begins to fail. Simulations were performed to demonstrate how these effects affect device operation, and the importance of simultaneously including both effects in device simulation is discussed.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116836484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Ashby, I. Koullias, William C. Finley, J. Bastek, S. Moinian
{"title":"High Q inductors for wireless applications in a complementary silicon bipolar process","authors":"K. Ashby, I. Koullias, William C. Finley, J. Bastek, S. Moinian","doi":"10.1109/BIPOL.1994.587889","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587889","url":null,"abstract":"Rectangular spiral inductors with Q's as high as 12 have been built in a high-speed complementary bipolar process and characterized for use in wireless applications. An accurate broadband model has been developed for the inductors, and a test filter and mixer have been built to verify the performance of the inductors and the accuracy of the model.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129007609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Comparison of polysilicon and silicon-carbon emitters with enhanced emitter efficiency","authors":"C.H.H. Emons, R. Koster, D. Paxman, M. Theunissen","doi":"10.1109/BIPOL.1994.587863","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587863","url":null,"abstract":"Plasma-Enhanced CVD (PECVD) and Low-Pressure CVD (LPCVD) silicon-carbon emitters have been fabricated in the same transistor layout together with the best conventional implanted polysilicon emitters. In this way the first direct comparison of DC-transistor characteristics has been made. The highest emitter Gummel numbers are achieved for PECVD silicon-carbon emitters (up to 92*10/sup 12/ s/cm/sup 4/ compared to 66*10/sup 12/ s/cm/sup 4/ for the best implanted polysilicon emitter), whereas emitter series resistance is acceptably low (0.97*10/sup -6/ /spl Omega/*cm/sup 2/). Moreover, the thermal budget for emitter formation is extremely low (30 minutes at 750/spl deg/C).","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134098730","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Yoshida, H. Suzuki, Y. Kinoshita, K. Imai, T. Akimoto, K. Tokashiki, T. Yamazaki
{"title":"Process integration technology for low process complexity BiCMOS using trench collector sink","authors":"H. Yoshida, H. Suzuki, Y. Kinoshita, K. Imai, T. Akimoto, K. Tokashiki, T. Yamazaki","doi":"10.1109/BIPOL.1994.587901","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587901","url":null,"abstract":"A BiCMOS process integration technology featuring a W-plug trench collector sink simultaneously formed with an emitter defining step is presented. This technology can provide a low resistance collector sink without any additional process steps to form the collector sink and realizes a low cost 0.35 /spl mu/m BiCMOS device with only 11 photo-masks.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126723777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A new approach for extracting base width modulation parameters in bipolar transistors","authors":"K. Joardar","doi":"10.1109/BIPOL.1994.587881","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587881","url":null,"abstract":"A new dc measurement technique that allows a direct observation of the Early effects and the base push-out effect in vertical bipolar transistors is described. The technique uses a special test structure and may be used to accurately determine the forward and reverse Early voltages used in the Gummel Poon model. The improvements provided by this method over conventionally used parameter extraction techniques are demonstrated through measurements on silicon and through two-dimensional device simulations.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114867240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
T. Ikeda, T. Nakashima, S. Kubo, H. Jouba, M. Yamawaki
{"title":"A high performance CBiCMOS with novel self-aligned vertical PNP transistors","authors":"T. Ikeda, T. Nakashima, S. Kubo, H. Jouba, M. Yamawaki","doi":"10.1109/BIPOL.1994.587903","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587903","url":null,"abstract":"This paper describes a vertical PNP transistor with a novel self-aligned structure and a complementary BiCMOS process which makes use of it. The PNP's emitter electrode is formed at the same fabrication step as that of a self-aligned NPN's base electrode, and the base electrode is formed at the same fabrication step as that of the self-aligned NPN's emitter electrode. The PNPs have been fabricated adding only one photo-mask and one doping step to the BiCMOS processes. The maximum cutoff frequency or PNP and NPN transistors are 4.2 GHz and 20 GHz, respectively. The MOS transistors are compatible with simple CMOS devices.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115081715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Accuracy of series resistances extraction schemes for polysilicon bipolar transistors","authors":"E. Dubois, P. Bricout, E. Robilliart","doi":"10.1109/BIPOL.1994.587883","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587883","url":null,"abstract":"In this work, two experimental methods used for the determination of the emitter and base series resistances are critically reviewed and compared to an accurate solution based on device simulations. In addition, the sensitivity of the series resistances on the potential barriers present at the emitter polysilicon/monocrystal interface is investigated.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122057194","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Chip-level electro-thermal simulation of bipolar transistor circuits","authors":"S. Moinian, P. Feldmann, R. Melville","doi":"10.1109/BIPOL.1994.587877","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587877","url":null,"abstract":"This paper presents accurate electro-thermal circuit-level modeling of both self and mutual heating for bipolar transistor IC devices. In addition, thermal transmission line network models are used to characterize the important mutual heating among devices on a chip. The models have been implemented in a new electro-thermal analog circuit simulator, Sframe, with robust convergence due to parameter continuation methodology.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116874773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H.H. Li, I. Widjaja, A. Kurnia, D. Divan, K. Shenai
{"title":"The effect of bipolar transistor in the switching dynamics of IGBTs in resonant converter applications","authors":"H.H. Li, I. Widjaja, A. Kurnia, D. Divan, K. Shenai","doi":"10.1109/BIPOL.1994.587880","DOIUrl":"https://doi.org/10.1109/BIPOL.1994.587880","url":null,"abstract":"This paper reports on extensive experimental and theoretical characteristics of Insulated Gate Bipolar Transistors (IGBTs) for resonant converter applications. It is shown that di/dt dependent dynamic forward voltage saturation occurs due to conductivity modulation lag in the drift region caused by high concentration of deep-level impurities. During turn-off, temperature and dv/dt dependent elevated tail current bump was measured that is caused by the minority carrier recombination effects in the drift region. The physical mechanisms causing this anomalous behavior are studied using advanced mixed device and circuit simulators. It is shown that bipolar carrier transport mechanisms place important constraints on tradeoff among the performance and Safe-Operating Area parameters.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132789043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}