{"title":"多晶硅双极晶体管串联电阻提取方案的准确性","authors":"E. Dubois, P. Bricout, E. Robilliart","doi":"10.1109/BIPOL.1994.587883","DOIUrl":null,"url":null,"abstract":"In this work, two experimental methods used for the determination of the emitter and base series resistances are critically reviewed and compared to an accurate solution based on device simulations. In addition, the sensitivity of the series resistances on the potential barriers present at the emitter polysilicon/monocrystal interface is investigated.","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Accuracy of series resistances extraction schemes for polysilicon bipolar transistors\",\"authors\":\"E. Dubois, P. Bricout, E. Robilliart\",\"doi\":\"10.1109/BIPOL.1994.587883\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, two experimental methods used for the determination of the emitter and base series resistances are critically reviewed and compared to an accurate solution based on device simulations. In addition, the sensitivity of the series resistances on the potential barriers present at the emitter polysilicon/monocrystal interface is investigated.\",\"PeriodicalId\":373721,\"journal\":{\"name\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"volume\":\"28 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BIPOL.1994.587883\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1994.587883","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Accuracy of series resistances extraction schemes for polysilicon bipolar transistors
In this work, two experimental methods used for the determination of the emitter and base series resistances are critically reviewed and compared to an accurate solution based on device simulations. In addition, the sensitivity of the series resistances on the potential barriers present at the emitter polysilicon/monocrystal interface is investigated.