Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

BiCMOS h/sub fe/ degradation: causes and circuit solution

Pub Date : 1994-10-10 DOI: 10.1109/BIPOL.1994.587893 C. McAndrew, I. Kizilyalli, J. Bude

An ECL gate with improved speed and low power in BiCMOS process

Pub Date : 1994-10-10 DOI: 10.1109/BIPOL.1994.587872 V. Oklobdzija

52 GHz epitaxial base bipolar transistor with high Early voltage of 26.5 V with box-like base and retrograded collector impurity profiles

Pub Date : 1994-10-10 DOI: 10.1109/BIPOL.1994.587898 K. Inou, S. Matsuda, H. Nakajima, N. Sugiyama, K. Usuda, S. Imai, Y. Kawaguchi, K. Yamada, Y. Katsumata, H. Iwai