An ECL gate with improved speed and low power in BiCMOS process

Abstract

An ECL gate exhibiting an improved speed-power product over the circuits presented in the past is described. The improvement is due to a combination of a push-pull output stage driven by a controlled current source. This circuit has better driving capabilities and improved speed, yet it uses an order of magnitude less power than regular ECL gate. Fully bipolar realization of this circuit is also possible.