52 GHz epitaxial base bipolar transistor with high Early voltage of 26.5 V with box-like base and retrograded collector impurity profiles

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI:10.1109/BIPOL.1994.587898

K. Inou, S. Matsuda, H. Nakajima, N. Sugiyama, K. Usuda, S. Imai, Y. Kawaguchi, K. Yamada, Y. Katsumata, H. Iwai

引用次数: 2

Abstract

UHV-CVD epitaxial base transistors having 52 GHz cutoff frequency and 26.5 V Early voltage have been fabricated by adopting a box like base and retrograded collector impurity profiles. In addition, to improve the epitaxial film quality, a hydrotermination technique is used.

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52 GHz外延基极双极晶体管，早期电压高达26.5 V，具有盒状基极和逆行集电极杂质谱

采用盒状基片和逆行集电极杂质谱，制备了截止频率为52 GHz、早期电压为26.5 V的UHV-CVD外延基晶体管。此外，为了提高外延膜的质量，采用了加氢终止技术。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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