Comparison of polysilicon and silicon-carbon emitters with enhanced emitter efficiency

C.H.H. Emons, R. Koster, D. Paxman, M. Theunissen
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引用次数: 3

Abstract

Plasma-Enhanced CVD (PECVD) and Low-Pressure CVD (LPCVD) silicon-carbon emitters have been fabricated in the same transistor layout together with the best conventional implanted polysilicon emitters. In this way the first direct comparison of DC-transistor characteristics has been made. The highest emitter Gummel numbers are achieved for PECVD silicon-carbon emitters (up to 92*10/sup 12/ s/cm/sup 4/ compared to 66*10/sup 12/ s/cm/sup 4/ for the best implanted polysilicon emitter), whereas emitter series resistance is acceptably low (0.97*10/sup -6/ /spl Omega/*cm/sup 2/). Moreover, the thermal budget for emitter formation is extremely low (30 minutes at 750/spl deg/C).
提高发射效率的多晶硅和硅碳发射体的比较
等离子体增强CVD (PECVD)和低压CVD (LPCVD)硅碳发射体与最佳的传统植入多晶硅发射体在相同的晶体管布局下被制造出来。用这种方法对直流晶体管的特性进行了第一次直接比较。最高的发射极Gummel数是实现PECVD硅碳发射极(高达92*10/sup 12/ s/cm/sup 4/相比66*10/sup 12/ s/cm/sup 4/对于最好的植入多晶硅发射极),而发射极系列电阻是可接受的低(0.97*10/sup -6/ /spl Omega/*cm/sup 2/)。此外,发射器形成的热收支非常低(在750/spl度/C下30分钟)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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