{"title":"Comparison of polysilicon and silicon-carbon emitters with enhanced emitter efficiency","authors":"C.H.H. Emons, R. Koster, D. Paxman, M. Theunissen","doi":"10.1109/BIPOL.1994.587863","DOIUrl":null,"url":null,"abstract":"Plasma-Enhanced CVD (PECVD) and Low-Pressure CVD (LPCVD) silicon-carbon emitters have been fabricated in the same transistor layout together with the best conventional implanted polysilicon emitters. In this way the first direct comparison of DC-transistor characteristics has been made. The highest emitter Gummel numbers are achieved for PECVD silicon-carbon emitters (up to 92*10/sup 12/ s/cm/sup 4/ compared to 66*10/sup 12/ s/cm/sup 4/ for the best implanted polysilicon emitter), whereas emitter series resistance is acceptably low (0.97*10/sup -6/ /spl Omega/*cm/sup 2/). Moreover, the thermal budget for emitter formation is extremely low (30 minutes at 750/spl deg/C).","PeriodicalId":373721,"journal":{"name":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1994.587863","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Plasma-Enhanced CVD (PECVD) and Low-Pressure CVD (LPCVD) silicon-carbon emitters have been fabricated in the same transistor layout together with the best conventional implanted polysilicon emitters. In this way the first direct comparison of DC-transistor characteristics has been made. The highest emitter Gummel numbers are achieved for PECVD silicon-carbon emitters (up to 92*10/sup 12/ s/cm/sup 4/ compared to 66*10/sup 12/ s/cm/sup 4/ for the best implanted polysilicon emitter), whereas emitter series resistance is acceptably low (0.97*10/sup -6/ /spl Omega/*cm/sup 2/). Moreover, the thermal budget for emitter formation is extremely low (30 minutes at 750/spl deg/C).