低本地输入功率1.9 GHz硅双极正交调制器，无需任何调整

Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting Pub Date : 1994-10-10 DOI:10.1109/BIPOL.1994.587887

S. Otaka, T. Yamaji, R. Fujimoto, C. Takahashi, H. Tanimoto

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引用次数: 0

摘要

采用硅双极技术制备了片上90/spl度移相器1.9 GHz正交调制器。在2.7 V本地输入功率为-15 dBm时，图像抑制比超过45 dB，载波馈通低于-40 dBc。正交调制器集成电路的芯片尺寸为2.49 mm/spl倍/2.14 mm。

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A low local input power 1.9 GHz Si-bipolar quadrature modulator without any adjustment

A 1.9 GHz quadrature modulator with on-chip 90/spl deg/ phase-shifter was fabricated in a silicon bipolar technology. An image-rejection ratio over 45 dB and a carrier feed-through below -40 dBc were attained at -15 dBm local input power from 2.7 V supply. A die size of quadrature modulator IC is 2.49 mm/spl times/2.14 mm.

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Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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