A high performance CBiCMOS with novel self-aligned vertical PNP transistors

Abstract

This paper describes a vertical PNP transistor with a novel self-aligned structure and a complementary BiCMOS process which makes use of it. The PNP's emitter electrode is formed at the same fabrication step as that of a self-aligned NPN's base electrode, and the base electrode is formed at the same fabrication step as that of the self-aligned NPN's emitter electrode. The PNPs have been fabricated adding only one photo-mask and one doping step to the BiCMOS processes. The maximum cutoff frequency or PNP and NPN transistors are 4.2 GHz and 20 GHz, respectively. The MOS transistors are compatible with simple CMOS devices.