The importance of including lattice self-heating and hot-carrier transport in BJT simulation

Abstract

As the size of VLSI devices shrinks, lattice self-heating and hot-carrier transport effects become significant in their operation. As a result, the drift-diffusion model which ignores local heating and models the hot-carrier transport effects with simple local field-dependent relationships begins to fail. Simulations were performed to demonstrate how these effects affect device operation, and the importance of simultaneously including both effects in device simulation is discussed.