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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996最新文献

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7 mm gate width power heterojunction FETs for Li-ion battery operated personal digital cellular phones 7毫米门宽功率异质结场效应管，用于锂离子电池操作的个人数字蜂窝电话
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567821
M. Tomita, K. Yamaguchi, H. Oikawa, K. Kuzuhara
{"title":"7 mm gate width power heterojunction FETs for Li-ion battery operated personal digital cellular phones","authors":"M. Tomita, K. Yamaguchi, H. Oikawa, K. Kuzuhara","doi":"10.1109/GAAS.1996.567821","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567821","url":null,"abstract":"This paper describes 950 MHz power performance of a 7.0 mm gate width double-doped AlGaAs-InGaAs-AlGaAs heterojunction FET (HJFET) with a 0.8 /spl mu/m long WSi gate for personal digital cellular phones. The fabricated HJFET exhibited 2.3 /spl Omega/.mm on-resistance, 600 mA/mm maximum drain current, 330 mS/mm transconductance and 12.7 V gate-to-drain breakdown voltage. Operated with a drain bias of 3.4 V, the HJFET demonstrated 1.23 W (30.9 dBm) output power and 56.3% power-added efficiency with -51.5 dBc adjacent channel leakage power at 50 kHz off-center frequency.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130069786","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Complementary heterostructure FET standard cells 互补异质结构FET标准电池
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567900
D. Fulkerson, R. Borgeson, R. Hochhalter, S. Baier, J. Nohava
{"title":"Complementary heterostructure FET standard cells","authors":"D. Fulkerson, R. Borgeson, R. Hochhalter, S. Baier, J. Nohava","doi":"10.1109/GAAS.1996.567900","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567900","url":null,"abstract":"Complementary heterostructure FET (CHFET) standard cells were developed in order to have a low-risk design approach to digital integrated circuits requiring low power and high clock speed (300 MHz to 1 GHz). The circuits take advantage of the very high n-channel transistor gain by using n-channel-rich circuit structures. The complementary cells are simultaneously faster and six times lower in AC power than Si CMOS with the same gate length. Additional CHFET cells with a DC power of 0.6 mW provide even faster speed for circuit critical paths.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122343634","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
InGaP/GaAs HBT-IC chipset for 10-Gb/s optical receiver 用于10gb /s光接收机的InGaP/GaAs HBT-IC芯片组
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567883
T. Ihara, Y. Oikawa, T. Yamamoto, H. Tomofuji, H. Hamano, H. Ohnishik, Y. Watanabe
{"title":"InGaP/GaAs HBT-IC chipset for 10-Gb/s optical receiver","authors":"T. Ihara, Y. Oikawa, T. Yamamoto, H. Tomofuji, H. Hamano, H. Ohnishik, Y. Watanabe","doi":"10.1109/GAAS.1996.567883","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567883","url":null,"abstract":"We have developed an IC chipset for 10 Gb/s optical transmission systems using high-speed and reliable InGaP/GaAs HBTs. The amplifiers showed over 10 GHz bandwidth and the decision circuit showed a very small decision ambiguity of 6 mV at 10 Gb/s. Using these ICs, we achieved an optical receiver sensitivity of -19.6 dBm, and -36.2 dBm (Pe=10/sup -12/) with an optical preamplifier, for an STM-64 signal. The deviation of receiver sensitivity was within 1 dB over a wide temperature range of 0 to 85/spl deg/C.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"101 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132428901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Decoupled electrical/thermal modeling of AlGaAs/GaAs heterojunction bipolar transistors AlGaAs/GaAs异质结双极晶体管的去耦电/热建模
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567841
R. Anholt, C. Bozada, G. Desalvo, R. Dettmer, J. Ebel, J. Gillespie, C. Havasy
{"title":"Decoupled electrical/thermal modeling of AlGaAs/GaAs heterojunction bipolar transistors","authors":"R. Anholt, C. Bozada, G. Desalvo, R. Dettmer, J. Ebel, J. Gillespie, C. Havasy","doi":"10.1109/GAAS.1996.567841","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567841","url":null,"abstract":"We describe a decoupled approach to modeling self heating effects in HBTs where we solve for average thermal impedances in three dimensions and solve the electrical problem at three fixed temperatures in two dimensions, then we find the self consistent solution of the temperature rise and current equations. Results are given for thermal impedances of thermally-shunted HBTs. Measured forward Gummel IV curves, IV curves for forced base currents, f/sub t/ values, and breakdown characteristics are compared with the model.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115976658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
P-HEMTs for low-voltage portable applications using filled gate fabrication process 使用填充栅极制造工艺的低压便携式应用的p - hemt
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567878
M. Martinez, M. Durlam, D. Halchin, R. Burton, J. Huang, S. Tehrani, A. Reyes, D. Green, N. Cody
{"title":"P-HEMTs for low-voltage portable applications using filled gate fabrication process","authors":"M. Martinez, M. Durlam, D. Halchin, R. Burton, J. Huang, S. Tehrani, A. Reyes, D. Green, N. Cody","doi":"10.1109/GAAS.1996.567878","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567878","url":null,"abstract":"A fundamental change in gate formation to a filled gate process was combined with changes in film deposition. The resulting p-HEMT manufacturing process gives much better performance for low-voltage RF amplification. At a drain voltage of 3.5 V, a 12-mm periphery device fabricated by this method is capable of 33 dBm output power with an associated power-added efficiency of greater than 75%.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"262 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122903264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
40 Gb/s, 3 volt InP HBT ICs for a fiber optic demonstrator system 用于光纤演示系统的40gb /s, 3伏InP HBT集成电路
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567822
T. Swahn, T. Lewin, M. Mokhtari, H. Tenhunen, R. Walden, W. Stanchina
{"title":"40 Gb/s, 3 volt InP HBT ICs for a fiber optic demonstrator system","authors":"T. Swahn, T. Lewin, M. Mokhtari, H. Tenhunen, R. Walden, W. Stanchina","doi":"10.1109/GAAS.1996.567822","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567822","url":null,"abstract":"We have designed and fabricated an InP HBT chip set intended for a 40 Gb/s fiber optic demonstrator system. The chip set consists of 14 different digital- and analog-ICs, and the project is a joint-venture between Ericsson Microwave Systems AB and Hughes Research Laboratories. The project goal is to demonstrate 40 Gb/s fiber optical operation, to learn how to design very high speed/high frequency integrated circuits, and to expand our knowledge on circuit behaviour prediction.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124604381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A monolithic 24.9 GHz limiting amplifier using 0.2 /spl mu/m-AlGaAs/GaAs-HEMTs 采用0.2 /spl μ /m-AlGaAs/GaAs-HEMTs的单片24.9 GHz限制放大器
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567871
Z. Lao, M. Berroth, M. Rieger-Motzer, A. Thiede, W. Bronner, A. Hulsmann, B. Raynor
{"title":"A monolithic 24.9 GHz limiting amplifier using 0.2 /spl mu/m-AlGaAs/GaAs-HEMTs","authors":"Z. Lao, M. Berroth, M. Rieger-Motzer, A. Thiede, W. Bronner, A. Hulsmann, B. Raynor","doi":"10.1109/GAAS.1996.567871","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567871","url":null,"abstract":"A monolithic limiting amplifier for high-speed communication systems has been fabricated using a 0.2 /spl mu/m enhancement/depletion AlGaAs/GaAs-HEMT (f/sub T/=60/55 GHz) technology. As a limiting amplifier, the circuit has a bandwidth of 24.9 GHz with a gain of 16 dB for an input power of -25 dBm. For applications as a linear amplifier, it has a bandwidth of 19.2 GHz with a gain of 26 dB for an input power of -50 dBm. Performance at a data bit rate of 25 Gb/s for single-ended input was obtained. The circuit features a differential configuration with ac-coupled active source followers to increase frequency band. The power consumption is 600 mW using a single supply voltage of -3.5 V.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125435891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Subfemtojoule 0.15 /spl mu/m InGaP/InGaAs/GaAs pseudomorphic HEMT DCFL circuits under 1 V supply voltage 在1 V电源电压下，亚飞焦耳0.15 /spl mu/m InGaP/InGaAs/GaAs伪晶HEMT DCFL电路
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567741
H. Suehiro, M. Shima, T. Shimura, N. Hara
{"title":"Subfemtojoule 0.15 /spl mu/m InGaP/InGaAs/GaAs pseudomorphic HEMT DCFL circuits under 1 V supply voltage","authors":"H. Suehiro, M. Shima, T. Shimura, N. Hara","doi":"10.1109/GAAS.1996.567741","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567741","url":null,"abstract":"We have fabricated side-wall assisted 0.15 /spl mu/m T-shaped gate pseudomorphic HEMT DCFL circuits with InGaP donor layers and obtained 22.3 ps basic delay and 0.8 fJ power-delay products at a supply voltage Vdd of 0.6 V with the driver gate width of 2 /spl mu/m. A master-slave type divide-by-two frequency divider which consists of eight 2-input NAND gates using a dual gate electrode structure shows stable operation of 10 GHz toggle frequency with a power consumption of 4.5 mW at Vdd of 0.8 V.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130617279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
P-contact MESFETs for high voltage mixed-mode RF-applications 用于高压混合模式射频应用的p接触mesfet
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567835
P. Wennekers, P. Zdebel, M. Wilson, T. Bushey, B. Bernhard
{"title":"P-contact MESFETs for high voltage mixed-mode RF-applications","authors":"P. Wennekers, P. Zdebel, M. Wilson, T. Bushey, B. Bernhard","doi":"10.1109/GAAS.1996.567835","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567835","url":null,"abstract":"MESFETs with P-well operating at higher drain voltage generate holes by impact ionization. They charge the GaAs substrate, give rise to increased output conductance and drain current transients at low temperature and facilitate inter-device coupling. Draining the holes by a P/sub +/-contact, which is attached to the source as an integral part of the device structure, neutralizes the adverse impact of holes on device performance. The improved MESFET is utilized in the digital section of a single-pole-eight-throw RF switch with integrated decoder.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133799941","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Integrated circuits for an experimental 10 Gb/s (SONET OC-192) self-healing ring 集成电路的实验10 Gb/s (SONET OC-192)自愈环
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567885
A. Jayakumar, T. Banwell, J. Hacker, D. Kong
{"title":"Integrated circuits for an experimental 10 Gb/s (SONET OC-192) self-healing ring","authors":"A. Jayakumar, T. Banwell, J. Hacker, D. Kong","doi":"10.1109/GAAS.1996.567885","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567885","url":null,"abstract":"SONET OC-192 with a data transmission rate of 9.95328 Gb/s has emerged as the next generation high capacity optical carrier. This paper presents the first complete implementation of 10 Gb/s multiplexing, demultiplexing and SONET framing functions on a 3-chip chip-set. The chip-set consists of an 8:1 multiplexer with auto phase alignment, a 1:8 demultiplexer with SONET frame detection and a multi-purpose interface chip to simplify system integration-all designed to operate at 10 Gb/s for use in an experimental SOMET OC-192 self-healing ring test bed. These experimental research prototype devices are based on the AlGaAs/GaAs Hetero-junction Bipolar Transistor (HBT) technology (f/sub t/=60 GHz). High speed packaging and system integration issues are also addressed.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129356446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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