采用0.2 /spl μ /m-AlGaAs/GaAs-HEMTs的单片24.9 GHz限制放大器

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567871

Z. Lao, M. Berroth, M. Rieger-Motzer, A. Thiede, W. Bronner, A. Hulsmann, B. Raynor

{"title":"采用0.2 /spl μ /m-AlGaAs/GaAs-HEMTs的单片24.9 GHz限制放大器","authors":"Z. Lao, M. Berroth, M. Rieger-Motzer, A. Thiede, W. Bronner, A. Hulsmann, B. Raynor","doi":"10.1109/GAAS.1996.567871","DOIUrl":null,"url":null,"abstract":"A monolithic limiting amplifier for high-speed communication systems has been fabricated using a 0.2 /spl mu/m enhancement/depletion AlGaAs/GaAs-HEMT (f/sub T/=60/55 GHz) technology. As a limiting amplifier, the circuit has a bandwidth of 24.9 GHz with a gain of 16 dB for an input power of -25 dBm. For applications as a linear amplifier, it has a bandwidth of 19.2 GHz with a gain of 26 dB for an input power of -50 dBm. Performance at a data bit rate of 25 Gb/s for single-ended input was obtained. The circuit features a differential configuration with ac-coupled active source followers to increase frequency band. The power consumption is 600 mW using a single supply voltage of -3.5 V.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A monolithic 24.9 GHz limiting amplifier using 0.2 /spl mu/m-AlGaAs/GaAs-HEMTs\",\"authors\":\"Z. Lao, M. Berroth, M. Rieger-Motzer, A. Thiede, W. Bronner, A. Hulsmann, B. Raynor\",\"doi\":\"10.1109/GAAS.1996.567871\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A monolithic limiting amplifier for high-speed communication systems has been fabricated using a 0.2 /spl mu/m enhancement/depletion AlGaAs/GaAs-HEMT (f/sub T/=60/55 GHz) technology. As a limiting amplifier, the circuit has a bandwidth of 24.9 GHz with a gain of 16 dB for an input power of -25 dBm. For applications as a linear amplifier, it has a bandwidth of 19.2 GHz with a gain of 26 dB for an input power of -50 dBm. Performance at a data bit rate of 25 Gb/s for single-ended input was obtained. The circuit features a differential configuration with ac-coupled active source followers to increase frequency band. The power consumption is 600 mW using a single supply voltage of -3.5 V.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567871\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567871","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

采用0.2 /spl mu/m增强/耗尽AlGaAs/GaAs-HEMT (f/sub /=60/55 GHz)技术制备了一种高速通信系统的单片限幅放大器。作为限幅放大器，该电路在输入功率为-25 dBm时带宽为24.9 GHz，增益为16 dB。作为线性放大器，它的带宽为19.2 GHz，输入功率为-50 dBm时增益为26 dB。获得了单端输入数据比特率为25 Gb/s的性能。该电路采用带交流耦合有源跟随器的差分配置来增加频带。功耗为600mw，单电源电压为-3.5 V。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

A monolithic 24.9 GHz limiting amplifier using 0.2 /spl mu/m-AlGaAs/GaAs-HEMTs

A monolithic limiting amplifier for high-speed communication systems has been fabricated using a 0.2 /spl mu/m enhancement/depletion AlGaAs/GaAs-HEMT (f/sub T/=60/55 GHz) technology. As a limiting amplifier, the circuit has a bandwidth of 24.9 GHz with a gain of 16 dB for an input power of -25 dBm. For applications as a linear amplifier, it has a bandwidth of 19.2 GHz with a gain of 26 dB for an input power of -50 dBm. Performance at a data bit rate of 25 Gb/s for single-ended input was obtained. The circuit features a differential configuration with ac-coupled active source followers to increase frequency band. The power consumption is 600 mW using a single supply voltage of -3.5 V.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

自引率

0.00%

发文量