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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996最新文献

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An accurate, large signal, high frequency model for GaAs HBTs 一个精确的、大信号的、高频率的GaAs hbt模型
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567895
Love H Camnitz, Steve Kofol, Tom Low, Sandeep R Bahl
{"title":"An accurate, large signal, high frequency model for GaAs HBTs","authors":"Love H Camnitz, Steve Kofol, Tom Low, Sandeep R Bahl","doi":"10.1109/GAAS.1996.567895","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567895","url":null,"abstract":"An accurate compact circuit simulation model has been developed for the large-signal, high-frequency behavior of GaAs single heterojunction bipolar transistors (HBTs). A unified, physically-based, quasistatic collector charge function models both base-collector capacitance and collector transit time. It naturally handles collector space-charge effects, \"full-depletion\" of the collector n region, and the dependence of the high-field electron velocity in GaAs on electric field and temperature. An improved charge expression accounts for the Kirk effect. This formulation has produced excellent model fits to measurements of AlGaAs-GaAs HBTs.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130505154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 40
Growth and properties of very large crystals of semi-insulating gallium arsenide 半绝缘砷化镓大晶体的生长与性质
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567636
R. Ware, W. Higgins, K. O'Hearn, M. Tiernan
{"title":"Growth and properties of very large crystals of semi-insulating gallium arsenide","authors":"R. Ware, W. Higgins, K. O'Hearn, M. Tiernan","doi":"10.1109/GAAS.1996.567636","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567636","url":null,"abstract":"A modified liquid encapsulated Czochralski (LEC) process has been developed which yields completely single crystals 22 kg in weight, 110 mm diameter and 435 mm parallel length. These crystals will yield up to 375 wafer/ingot compared with the 50-80 wafers typical of the current 8 kg process. This process moves the production of GaAs substrates from a research and development operation to a genuine production process with significant improvements in economy, for both substrate and device manufacturers. The key to the process is the control of melt/solid interface shape by modification of the thermal geometry of the MRSL 15/25 puller, using a simple single heater system. Uniformity of electrical properties was maintained over the length of these long crystals.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131092777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Hot carrier reliability in high-power PHEMTs 大功率phemt的热载波可靠性
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567634
Y. Chou, G. Li, K. Yu, P. Chu, L. Hou, C. Wu, T. Midford
{"title":"Hot carrier reliability in high-power PHEMTs","authors":"Y. Chou, G. Li, K. Yu, P. Chu, L. Hou, C. Wu, T. Midford","doi":"10.1109/GAAS.1996.567634","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567634","url":null,"abstract":"PECVD nitride passivated high-power AlGaAs/InGaAs PHEMTs were used to study their hot carrier reliability. The typical hot carrier induced device degradation characteristics are often observed in devices with a less-than-ideal double gate recess and material layers design. With additional drain engineering work to optimize device power performance, the hot carrier effects can be alleviated drastically. However, depending on nitride deposition processes and nitride quality, Schottky diode degradation (a barrier height increase) was also observed during hot carrier stress. This study facilitates a comprehensive characterization of the hot carrier induced effects in power PHEMT's and recommends an alternative to improve the hot carrier reliability.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"76 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132099268","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Complementary GaAs technology for a GHz microprocessor 用于GHz微处理器的互补GaAs技术
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567897
R.B. Brown, T. Basso, P. Parakh, S. M. Gold, C. Gauthier, R. Lomax, T. Mudge
{"title":"Complementary GaAs technology for a GHz microprocessor","authors":"R.B. Brown, T. Basso, P. Parakh, S. M. Gold, C. Gauthier, R. Lomax, T. Mudge","doi":"10.1109/GAAS.1996.567897","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567897","url":null,"abstract":"A DARPA-funded project at the University of Michigan has as a goal the development of technologies and tools needed to implement microprocessors that can be clocked at GHz speeds. A Complementary GaAs HIGFET technology from the Motorola CS-1 facility (CGaAs) is the target semiconductor process. While this technology is immature, it is years ahead of CMOS in terms of fast gate delay at low power supply voltages. A major focus of this work is advanced packaging, which supports partitioning of the design into multiple integrated circuits, each having an integration level that should be achievable in CGaAs. This paper touches on the major aspects of the project, process technology, circuit design, packaging, architecture, CAD tools and software, with an emphasis on application of the CGaAs technology.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130045943","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Effects of buried p-layers on substrate-trap induced phenomena in GaAs MESFETs 埋置p层对GaAs mesfet中衬底陷阱诱导现象的影响
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567846
K. Kunihiro, M. Nogome, Y. Ohno
{"title":"Effects of buried p-layers on substrate-trap induced phenomena in GaAs MESFETs","authors":"K. Kunihiro, M. Nogome, Y. Ohno","doi":"10.1109/GAAS.1996.567846","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567846","url":null,"abstract":"We investigate the effects of buried p-layers (BP-layers) on substrate-trap induced frequency dispersion of drain conductance in GaAs MESFETs. Our experiments show that the condition of the BP-layers significantly influences their effectiveness in suppressing trap-induced low-frequency anomalies. These results can be well explained by the self-backgating model. While suppressing trap-induced phenomena, a BP-layer itself may cause current transients at higher frequencies due to parasitic capacitance increase; this is also investigated in detail.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116617899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
A symmetric GaAs MESFET structure with a lightly doped deep drain for linear amplifiers operating with a single low-voltage supply 具有轻掺杂深漏的对称GaAs MESFET结构，用于单低压电源工作的线性放大器
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567877
M. Hirose, K. Nishihori, M. Nagaoka, Y. Ikeda, A. Kameyama, Y. Kitaura, N. Uchitomi
{"title":"A symmetric GaAs MESFET structure with a lightly doped deep drain for linear amplifiers operating with a single low-voltage supply","authors":"M. Hirose, K. Nishihori, M. Nagaoka, Y. Ikeda, A. Kameyama, Y. Kitaura, N. Uchitomi","doi":"10.1109/GAAS.1996.567877","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567877","url":null,"abstract":"An improved symmetric GaAs MESFET structure with a lightly doped deep source/drain is proposed for application to power amplifiers in mobile communication terminals. With lightly doped deep drain, the impact ionization falls as the electron current expands and the current density decreases. Thus, the breakdown voltage rises, while a high transconductance and low parasitic resistance are maintained. Furthermore, the symmetric structure suits for mass production because of its fabrication process without mask alignment precision. This structure was fabricated using the WNx/W self-aligned gate process, and DC and RF characteristics were evaluated. The power-added efficiency was 37% at an adjacent channel leakage power of -55 dBc for 37%-shift QPSK modulated input signals at 1.9 GHz with a single positive supply voltage of 3 V. The efficiency was also high at a lower supply voltage: 34% at 1.2 V.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122356874","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
High efficiency AlGaAs/GaAs power HBTs at a low supply voltage for digital cellular phones 用于数字蜂窝电话的低电压高效率AlGaAs/GaAs功率hbt
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567746
T. Miura, T. Shimura, K. Mori, Y. Uneme, H. Nakano, A. Inoue, R. Hattori, N. Tanino
{"title":"High efficiency AlGaAs/GaAs power HBTs at a low supply voltage for digital cellular phones","authors":"T. Miura, T. Shimura, K. Mori, Y. Uneme, H. Nakano, A. Inoue, R. Hattori, N. Tanino","doi":"10.1109/GAAS.1996.567746","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567746","url":null,"abstract":"We present a high performance AlGaAs/GaAs power HBT with very low thermal resistance for digital cellular phones. Device structure with emitter air-bridge is utilized and device layout is optimized to reduce thermal resistance by three-dimensional thermal flow analysis, and in spite of a rather thick substrate (100 /spl mu/m), a low thermal resistance of 23/spl deg/C/W is achieved for a multi-finger (4/spl times/40 /spl mu/m/sup 2//spl times/40 fingers) HBT. This 40 finger HBT achieved power added efficiency (PAE) of over 53%, 29.1 dBm output power (Pout) and high associated gain (Ga) of 13.5 dB with 50 KHz adjacent channel leakage power (Padj) of less than 48 dBc under a 948 MHz /spl pi//4-shifted QPSK modulation with 3.4 V emitter-collector voltage.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"109 21","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120820766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
High power quasi-optical sources for millimeter-wave base-station applications 用于毫米波基站的高功率准光源
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567873
N. Kolias, M. J. Vaughan, R. Compton
{"title":"High power quasi-optical sources for millimeter-wave base-station applications","authors":"N. Kolias, M. J. Vaughan, R. Compton","doi":"10.1109/GAAS.1996.567873","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567873","url":null,"abstract":"Millimeter-wave radios are becoming an increasingly competitive alternative to traditional twisted-pair, cable, and fiber technologies. New spectrum bands are being allocated to allow for the commercial development of local, cellular-like communication networks. Because solid-state devices have low output powers at millimeter-wave frequencies, the outputs from many devices must be combined to produce the power levels dictated by link-budget analysis. By integrating a large number of devices with antennas into an array, radiated signals can coherently combine in free-space with high efficiency. This paper will discuss on-going activities to develop high-power quasi-optical transmitters for these new wireless bands.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122834231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Effects of reverse gate-drain breakdown on gradual degradation of power PHEMTs 反向栅极-漏极击穿对功率phemt逐渐退化的影响
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567630
R. Leoni, J.C.M. Hwang
{"title":"Effects of reverse gate-drain breakdown on gradual degradation of power PHEMTs","authors":"R. Leoni, J.C.M. Hwang","doi":"10.1109/GAAS.1996.567630","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567630","url":null,"abstract":"The gradual degradation effects of reverse gate-drain breakdown which often occurs in high-efficiency operation of power PHEMTs were studied. Similar to MESFETs, PHEMTs were founded to be susceptible to breakdown-induced trap formation in the silicon-nitride surface passivation, the figure of merit against such degradation being approximately two orders of magnitude lower for PHEMTs than for MESFETs. Thus, even if a PHEMT has the same breakdown voltage as a MESFET, the former cannot be driven with as high a drain voltage as the latter. In addition, unlike MESFETs, PHEMTs can undergo an initial power expansion before power slump, due to breakdown-induced donor activation. Therefore, care must be taken to stress PHEMTs sufficiently in order to ascertain their stability against degradation.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117285265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Breakdown effects on the performance and reliability of power MESFETs 击穿对功率mesfet性能和可靠性的影响
GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567631
M. Shirokov, R. Leoni, C. Wei, J.C.M. Hwang
{"title":"Breakdown effects on the performance and reliability of power MESFETs","authors":"M. Shirokov, R. Leoni, C. Wei, J.C.M. Hwang","doi":"10.1109/GAAS.1996.567631","DOIUrl":"https://doi.org/10.1109/GAAS.1996.567631","url":null,"abstract":"RF breakdown effects were characterized by waveform measurements and incorporated in a large-signal GaAs MESFET model. Compared to conventional models that are based on dc breakdown characteristics, the present model was found to predict more accurately the optimum bias, match, and drive conditions of the transistor, as well as its output power, efficiency, linearity, and reliability.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114917694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
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