Breakdown effects on the performance and reliability of power MESFETs

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567631

M. Shirokov, R. Leoni, C. Wei, J.C.M. Hwang

引用次数: 16

Abstract

RF breakdown effects were characterized by waveform measurements and incorporated in a large-signal GaAs MESFET model. Compared to conventional models that are based on dc breakdown characteristics, the present model was found to predict more accurately the optimum bias, match, and drive conditions of the transistor, as well as its output power, efficiency, linearity, and reliability.

查看原文本刊更多论文

击穿对功率mesfet性能和可靠性的影响

通过波形测量来表征射频击穿效应，并将其纳入大信号GaAs MESFET模型。与基于直流击穿特性的传统模型相比，该模型可以更准确地预测晶体管的最佳偏置、匹配和驱动条件，以及其输出功率、效率、线性度和可靠性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

自引率

0.00%

发文量