A symmetric GaAs MESFET structure with a lightly doped deep drain for linear amplifiers operating with a single low-voltage supply

M. Hirose, K. Nishihori, M. Nagaoka, Y. Ikeda, A. Kameyama, Y. Kitaura, N. Uchitomi
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引用次数: 7

Abstract

An improved symmetric GaAs MESFET structure with a lightly doped deep source/drain is proposed for application to power amplifiers in mobile communication terminals. With lightly doped deep drain, the impact ionization falls as the electron current expands and the current density decreases. Thus, the breakdown voltage rises, while a high transconductance and low parasitic resistance are maintained. Furthermore, the symmetric structure suits for mass production because of its fabrication process without mask alignment precision. This structure was fabricated using the WNx/W self-aligned gate process, and DC and RF characteristics were evaluated. The power-added efficiency was 37% at an adjacent channel leakage power of -55 dBc for 37%-shift QPSK modulated input signals at 1.9 GHz with a single positive supply voltage of 3 V. The efficiency was also high at a lower supply voltage: 34% at 1.2 V.
具有轻掺杂深漏的对称GaAs MESFET结构,用于单低压电源工作的线性放大器
提出了一种用于移动通信终端功率放大器的改进的具有轻掺杂深源/漏极的对称GaAs MESFET结构。当深漏极掺量较轻时,随着电流的增大和电流密度的减小,冲击电离度减小。因此,击穿电压上升,同时保持高跨导和低寄生电阻。此外,由于其制造过程不需要掩模对准精度,对称结构适合大批量生产。该结构采用WNx/W自对准栅极工艺制备,并对其直流和射频特性进行了评估。在相邻通道漏功率为-55 dBc时,在单电源电压为3v的1.9 GHz频率下,对位移为37%的QPSK调制输入信号,功率增加效率为37%。在较低的电源电压下,效率也很高:在1.2 V时为34%。
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