GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996最新文献_第7页

Q-band high isolation GaAs HEMT switches q波段高隔离GaAs HEMT开关

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567891

D. Ingram, K. Cha, K. Hubbard, R. Lai

引用次数: 20

A 55% efficiency 5 W PHEMT X-band MMIC high power amplifier 55%效率5w PHEMT x波段MMIC高功率放大器

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567818

R. Wang, M. Cole, L. Hou, P. Chu, C.D. Chang, T. Midford, T. Cisco

引用次数: 18

Low dc power high-gain bandwidth product InAlAs/InGaAs-InP HBT direct-coupled amplifiers 低直流功率高增益带宽产品InAlAs/InGaAs-InP HBT直接耦合放大器

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI: 10.1109/GAAS.1996.567829

K. Kobayashi, L. Tran, T. Block, A. Oki, D. Streit

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引用次数: 21

A 3.6-W 26 GHz-band AlGaAs/GaAs HBT power amplifier 一种3.6 w 26ghz频段AlGaAs/GaAs HBT功率放大器

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-10-01 DOI: 10.1109/GAAS.1996.567751

S. Murakami, S. Tanaka, Y. Amamiya, H. Shimawaki, N. Goto, K. Honjo, Y. Ishida, Y. Saitoh, M. Yajima, Y. Hisada

引用次数: 5