q波段高隔离GaAs HEMT开关

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567891

D. Ingram, K. Cha, K. Hubbard, R. Lai

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引用次数: 20

摘要

在本文中，我们给出了q波段GaAs HEMT开关的片上测量结果。这项工作对SPDT开关的最先进性能进行了基准测试，该开关在44 GHz时具有1.6 dB插入损耗和50 dB隔离;SPQT开关，在44 GHz时具有3 dB插入损耗和42 dB隔离。SPDT交换机在41-49 GHz带宽上的隔离度为30-50 dB。SPQT开关在42-47 GHz带宽上具有30-48 dB的隔离。这比报道的q波段FET开关的隔离度提高了20 dB。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Q-band high isolation GaAs HEMT switches

In this paper, we present on-wafer measured results of Q-band GaAs HEMT switches. This work benchmarks the state-of-the-art performance of a SPDT switch with 1.6 dB insertion loss and 50 dB isolation at 44 GHz; a SPQT switch with 3 dB insertion loss and 42 dB isolation at 44 GHz. The SPDT switch has isolation of 30-50 dB over a 41-49 GHz bandwidth. The SPQT switch has isolation of 30-48 dB over a 42-47 GHz bandwidth. This is a 20 dB improvement in isolation over reported Q-band FET switches.

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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