A 55% efficiency 5 W PHEMT X-band MMIC high power amplifier

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567818

R. Wang, M. Cole, L. Hou, P. Chu, C.D. Chang, T. Midford, T. Cisco

引用次数: 18

Abstract

We have developed a highly efficient two stage X-band MMIC high power amplifier. Based on an optimized PHEMT device structure and a novel design approach, the amplifier demonstrated an average power added efficiency of 55% and an output power of 5 watts. A peak efficiency of 60% at near 8.0 GHz was obtained. The average drain current is 1.4 A at 7.0 V drain voltage. This is the highest reported efficiency for a broad-band, high power amplifier at X-band frequencies.

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55%效率5w PHEMT x波段MMIC高功率放大器

我们开发了一种高效的两级x波段MMIC高功率放大器。基于优化的PHEMT器件结构和新颖的设计方法，该放大器的平均功率增加效率为55%，输出功率为5瓦。在8.0 GHz附近获得了60%的峰值效率。在7.0 V漏极电压下，平均漏极电流为1.4 A。这是在x波段频率的宽带高功率放大器的最高效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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