A 3.6-W 26 GHz-band AlGaAs/GaAs HBT power amplifier

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-10-01 DOI:10.1109/GAAS.1996.567751

S. Murakami, S. Tanaka, Y. Amamiya, H. Shimawaki, N. Goto, K. Honjo, Y. Ishida, Y. Saitoh, M. Yajima, Y. Hisada

引用次数: 5

Abstract

A 3.6-watt 26-GHz band AlGaAs/GaAs heterojunction bipolar transistor (HBT) power amplifier is described. The amplifier is composed of two common-base (CB) HBT chips, and achieves a output power of 3.63 W (35.6 dBm), power-added efficiency (PAE) of 21.2% and associated gain of 6.2 dB with a 1-dB bandwidth between 25.5 and 26.5 GHz. As far as we know, the output power obtained in this work is more than twice that obtained in other works in these frequency bands.

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一种3.6 w 26ghz频段AlGaAs/GaAs HBT功率放大器

介绍了一种3.6瓦26 ghz频段AlGaAs/GaAs异质结双极晶体管(HBT)功率放大器。该放大器由两个共基(CB) HBT芯片组成，输出功率为3.63 W (35.6 dBm)，功率附加效率(PAE)为21.2%，相关增益为6.2 dB, 1db带宽在25.5 ~ 26.5 GHz之间。据我们所知，在这些频段内，本作品获得的输出功率是其他作品的两倍以上。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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