R.B. Brown, T. Basso, P. Parakh, S. M. Gold, C. Gauthier, R. Lomax, T. Mudge
{"title":"用于GHz微处理器的互补GaAs技术","authors":"R.B. Brown, T. Basso, P. Parakh, S. M. Gold, C. Gauthier, R. Lomax, T. Mudge","doi":"10.1109/GAAS.1996.567897","DOIUrl":null,"url":null,"abstract":"A DARPA-funded project at the University of Michigan has as a goal the development of technologies and tools needed to implement microprocessors that can be clocked at GHz speeds. A Complementary GaAs HIGFET technology from the Motorola CS-1 facility (CGaAs) is the target semiconductor process. While this technology is immature, it is years ahead of CMOS in terms of fast gate delay at low power supply voltages. A major focus of this work is advanced packaging, which supports partitioning of the design into multiple integrated circuits, each having an integration level that should be achievable in CGaAs. This paper touches on the major aspects of the project, process technology, circuit design, packaging, architecture, CAD tools and software, with an emphasis on application of the CGaAs technology.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":"{\"title\":\"Complementary GaAs technology for a GHz microprocessor\",\"authors\":\"R.B. Brown, T. Basso, P. Parakh, S. M. Gold, C. Gauthier, R. Lomax, T. Mudge\",\"doi\":\"10.1109/GAAS.1996.567897\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A DARPA-funded project at the University of Michigan has as a goal the development of technologies and tools needed to implement microprocessors that can be clocked at GHz speeds. A Complementary GaAs HIGFET technology from the Motorola CS-1 facility (CGaAs) is the target semiconductor process. While this technology is immature, it is years ahead of CMOS in terms of fast gate delay at low power supply voltages. A major focus of this work is advanced packaging, which supports partitioning of the design into multiple integrated circuits, each having an integration level that should be achievable in CGaAs. This paper touches on the major aspects of the project, process technology, circuit design, packaging, architecture, CAD tools and software, with an emphasis on application of the CGaAs technology.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"11\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567897\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567897","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 11
摘要
美国国防部高级研究计划局(darpa)资助的密歇根大学(University of Michigan)项目的目标是开发实现千兆赫(GHz)速度微处理器所需的技术和工具。摩托罗拉CS-1工厂(CGaAs)的互补GaAs HIGFET技术是目标半导体工艺。虽然这项技术还不成熟,但在低电源电压下的快速栅极延迟方面,它已经领先CMOS很多年了。这项工作的主要焦点是高级封装,它支持将设计划分为多个集成电路,每个集成电路都具有在cgaa中可以实现的集成级别。本文从项目、工艺技术、电路设计、封装、体系结构、CAD工具和软件等方面进行了论述,重点介绍了CGaAs技术的应用。
Complementary GaAs technology for a GHz microprocessor
A DARPA-funded project at the University of Michigan has as a goal the development of technologies and tools needed to implement microprocessors that can be clocked at GHz speeds. A Complementary GaAs HIGFET technology from the Motorola CS-1 facility (CGaAs) is the target semiconductor process. While this technology is immature, it is years ahead of CMOS in terms of fast gate delay at low power supply voltages. A major focus of this work is advanced packaging, which supports partitioning of the design into multiple integrated circuits, each having an integration level that should be achievable in CGaAs. This paper touches on the major aspects of the project, process technology, circuit design, packaging, architecture, CAD tools and software, with an emphasis on application of the CGaAs technology.