{"title":"反向栅极-漏极击穿对功率phemt逐渐退化的影响","authors":"R. Leoni, J.C.M. Hwang","doi":"10.1109/GAAS.1996.567630","DOIUrl":null,"url":null,"abstract":"The gradual degradation effects of reverse gate-drain breakdown which often occurs in high-efficiency operation of power PHEMTs were studied. Similar to MESFETs, PHEMTs were founded to be susceptible to breakdown-induced trap formation in the silicon-nitride surface passivation, the figure of merit against such degradation being approximately two orders of magnitude lower for PHEMTs than for MESFETs. Thus, even if a PHEMT has the same breakdown voltage as a MESFET, the former cannot be driven with as high a drain voltage as the latter. In addition, unlike MESFETs, PHEMTs can undergo an initial power expansion before power slump, due to breakdown-induced donor activation. Therefore, care must be taken to stress PHEMTs sufficiently in order to ascertain their stability against degradation.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"Effects of reverse gate-drain breakdown on gradual degradation of power PHEMTs\",\"authors\":\"R. Leoni, J.C.M. Hwang\",\"doi\":\"10.1109/GAAS.1996.567630\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The gradual degradation effects of reverse gate-drain breakdown which often occurs in high-efficiency operation of power PHEMTs were studied. Similar to MESFETs, PHEMTs were founded to be susceptible to breakdown-induced trap formation in the silicon-nitride surface passivation, the figure of merit against such degradation being approximately two orders of magnitude lower for PHEMTs than for MESFETs. Thus, even if a PHEMT has the same breakdown voltage as a MESFET, the former cannot be driven with as high a drain voltage as the latter. In addition, unlike MESFETs, PHEMTs can undergo an initial power expansion before power slump, due to breakdown-induced donor activation. Therefore, care must be taken to stress PHEMTs sufficiently in order to ascertain their stability against degradation.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567630\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567630","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of reverse gate-drain breakdown on gradual degradation of power PHEMTs
The gradual degradation effects of reverse gate-drain breakdown which often occurs in high-efficiency operation of power PHEMTs were studied. Similar to MESFETs, PHEMTs were founded to be susceptible to breakdown-induced trap formation in the silicon-nitride surface passivation, the figure of merit against such degradation being approximately two orders of magnitude lower for PHEMTs than for MESFETs. Thus, even if a PHEMT has the same breakdown voltage as a MESFET, the former cannot be driven with as high a drain voltage as the latter. In addition, unlike MESFETs, PHEMTs can undergo an initial power expansion before power slump, due to breakdown-induced donor activation. Therefore, care must be taken to stress PHEMTs sufficiently in order to ascertain their stability against degradation.