用于数字蜂窝电话的低电压高效率AlGaAs/GaAs功率hbt

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567746

T. Miura, T. Shimura, K. Mori, Y. Uneme, H. Nakano, A. Inoue, R. Hattori, N. Tanino

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引用次数: 16

摘要

我们提出了一种用于数字蜂窝电话的高性能低热阻AlGaAs/GaAs功率HBT。通过三维热流分析，利用发射极气桥的器件结构和优化器件布局来降低热阻，尽管衬底较厚(100 /spl mu/m)，但对于多指(4/spl倍/40 /spl mu/m/sup 2//spl倍/40指)HBT，实现了23/spl度/C/W的低热阻。在3.4 V发射集电极电压下，在948 MHz /spl pi//4移位QPSK调制下，该40指HBT实现了超过53%的功率附加效率(PAE)， 29.1 dBm输出功率(Pout)和13.5 dB的高相关增益(Ga)， 50 KHz相邻通道泄漏功率(Padj)小于48 dBc。

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High efficiency AlGaAs/GaAs power HBTs at a low supply voltage for digital cellular phones

We present a high performance AlGaAs/GaAs power HBT with very low thermal resistance for digital cellular phones. Device structure with emitter air-bridge is utilized and device layout is optimized to reduce thermal resistance by three-dimensional thermal flow analysis, and in spite of a rather thick substrate (100 /spl mu/m), a low thermal resistance of 23/spl deg/C/W is achieved for a multi-finger (4/spl times/40 /spl mu/m/sup 2//spl times/40 fingers) HBT. This 40 finger HBT achieved power added efficiency (PAE) of over 53%, 29.1 dBm output power (Pout) and high associated gain (Ga) of 13.5 dB with 50 KHz adjacent channel leakage power (Padj) of less than 48 dBc under a 948 MHz /spl pi//4-shifted QPSK modulation with 3.4 V emitter-collector voltage.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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