{"title":"击穿对功率mesfet性能和可靠性的影响","authors":"M. Shirokov, R. Leoni, C. Wei, J.C.M. Hwang","doi":"10.1109/GAAS.1996.567631","DOIUrl":null,"url":null,"abstract":"RF breakdown effects were characterized by waveform measurements and incorporated in a large-signal GaAs MESFET model. Compared to conventional models that are based on dc breakdown characteristics, the present model was found to predict more accurately the optimum bias, match, and drive conditions of the transistor, as well as its output power, efficiency, linearity, and reliability.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"Breakdown effects on the performance and reliability of power MESFETs\",\"authors\":\"M. Shirokov, R. Leoni, C. Wei, J.C.M. Hwang\",\"doi\":\"10.1109/GAAS.1996.567631\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"RF breakdown effects were characterized by waveform measurements and incorporated in a large-signal GaAs MESFET model. Compared to conventional models that are based on dc breakdown characteristics, the present model was found to predict more accurately the optimum bias, match, and drive conditions of the transistor, as well as its output power, efficiency, linearity, and reliability.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567631\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567631","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Breakdown effects on the performance and reliability of power MESFETs
RF breakdown effects were characterized by waveform measurements and incorporated in a large-signal GaAs MESFET model. Compared to conventional models that are based on dc breakdown characteristics, the present model was found to predict more accurately the optimum bias, match, and drive conditions of the transistor, as well as its output power, efficiency, linearity, and reliability.
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