{"title":"埋置p层对GaAs mesfet中衬底陷阱诱导现象的影响","authors":"K. Kunihiro, M. Nogome, Y. Ohno","doi":"10.1109/GAAS.1996.567846","DOIUrl":null,"url":null,"abstract":"We investigate the effects of buried p-layers (BP-layers) on substrate-trap induced frequency dispersion of drain conductance in GaAs MESFETs. Our experiments show that the condition of the BP-layers significantly influences their effectiveness in suppressing trap-induced low-frequency anomalies. These results can be well explained by the self-backgating model. While suppressing trap-induced phenomena, a BP-layer itself may cause current transients at higher frequencies due to parasitic capacitance increase; this is also investigated in detail.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Effects of buried p-layers on substrate-trap induced phenomena in GaAs MESFETs\",\"authors\":\"K. Kunihiro, M. Nogome, Y. Ohno\",\"doi\":\"10.1109/GAAS.1996.567846\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We investigate the effects of buried p-layers (BP-layers) on substrate-trap induced frequency dispersion of drain conductance in GaAs MESFETs. Our experiments show that the condition of the BP-layers significantly influences their effectiveness in suppressing trap-induced low-frequency anomalies. These results can be well explained by the self-backgating model. While suppressing trap-induced phenomena, a BP-layer itself may cause current transients at higher frequencies due to parasitic capacitance increase; this is also investigated in detail.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"35 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567846\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567846","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effects of buried p-layers on substrate-trap induced phenomena in GaAs MESFETs
We investigate the effects of buried p-layers (BP-layers) on substrate-trap induced frequency dispersion of drain conductance in GaAs MESFETs. Our experiments show that the condition of the BP-layers significantly influences their effectiveness in suppressing trap-induced low-frequency anomalies. These results can be well explained by the self-backgating model. While suppressing trap-induced phenomena, a BP-layer itself may cause current transients at higher frequencies due to parasitic capacitance increase; this is also investigated in detail.