埋置p层对GaAs mesfet中衬底陷阱诱导现象的影响

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567846

K. Kunihiro, M. Nogome, Y. Ohno

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引用次数: 5

摘要

我们研究了埋入p层(bp层)对GaAs mesfet中衬底陷阱诱导的漏极电导频散的影响。我们的实验表明，bp层的条件显著影响其抑制圈闭引起的低频异常的有效性。这些结果可以用自回溯模型很好地解释。在抑制陷阱现象的同时，由于寄生电容的增加，bp层本身可能在更高频率下引起电流瞬变;对此也进行了详细的研究。

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Effects of buried p-layers on substrate-trap induced phenomena in GaAs MESFETs

We investigate the effects of buried p-layers (BP-layers) on substrate-trap induced frequency dispersion of drain conductance in GaAs MESFETs. Our experiments show that the condition of the BP-layers significantly influences their effectiveness in suppressing trap-induced low-frequency anomalies. These results can be well explained by the self-backgating model. While suppressing trap-induced phenomena, a BP-layer itself may cause current transients at higher frequencies due to parasitic capacitance increase; this is also investigated in detail.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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