一个精确的、大信号的、高频率的GaAs hbt模型

Love H Camnitz, Steve Kofol, Tom Low, Sandeep R Bahl
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引用次数: 40

摘要

建立了GaAs单异质结双极晶体管(hbt)大信号高频特性的精确紧凑电路仿真模型。一个统一的、基于物理的、准静态的集电极电荷函数模拟了基极集电极电容和集电极传输时间。它自然地处理集电极空间电荷效应,集电极n区“完全耗尽”,以及GaAs中高场电子速度对电场和温度的依赖。改进的电荷表达式解释了柯克效应。该公式产生了极好的模型拟合测量的AlGaAs-GaAs HBTs。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
An accurate, large signal, high frequency model for GaAs HBTs
An accurate compact circuit simulation model has been developed for the large-signal, high-frequency behavior of GaAs single heterojunction bipolar transistors (HBTs). A unified, physically-based, quasistatic collector charge function models both base-collector capacitance and collector transit time. It naturally handles collector space-charge effects, "full-depletion" of the collector n region, and the dependence of the high-field electron velocity in GaAs on electric field and temperature. An improved charge expression accounts for the Kirk effect. This formulation has produced excellent model fits to measurements of AlGaAs-GaAs HBTs.
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