大功率phemt的热载波可靠性

Y. Chou, G. Li, K. Yu, P. Chu, L. Hou, C. Wu, T. Midford
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引用次数: 18

摘要

采用PECVD氮化钝化高功率AlGaAs/InGaAs phemt对其热载流子可靠性进行了研究。典型的热载流子引起的器件退化特性经常出现在具有不理想的双栅极凹槽和材料层设计的器件中。通过额外的排水工程来优化器件的功率性能,热载子效应可以大大减轻。然而,根据氮化物沉积工艺和氮化物质量的不同,在热载子应力下也观察到肖特基二极管的退化(势垒高度增加)。本研究促进了电力PHEMT中热载子诱导效应的全面表征,并推荐了提高热载子可靠性的替代方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Hot carrier reliability in high-power PHEMTs
PECVD nitride passivated high-power AlGaAs/InGaAs PHEMTs were used to study their hot carrier reliability. The typical hot carrier induced device degradation characteristics are often observed in devices with a less-than-ideal double gate recess and material layers design. With additional drain engineering work to optimize device power performance, the hot carrier effects can be alleviated drastically. However, depending on nitride deposition processes and nitride quality, Schottky diode degradation (a barrier height increase) was also observed during hot carrier stress. This study facilitates a comprehensive characterization of the hot carrier induced effects in power PHEMT's and recommends an alternative to improve the hot carrier reliability.
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