Y. Chou, G. Li, K. Yu, P. Chu, L. Hou, C. Wu, T. Midford
{"title":"大功率phemt的热载波可靠性","authors":"Y. Chou, G. Li, K. Yu, P. Chu, L. Hou, C. Wu, T. Midford","doi":"10.1109/GAAS.1996.567634","DOIUrl":null,"url":null,"abstract":"PECVD nitride passivated high-power AlGaAs/InGaAs PHEMTs were used to study their hot carrier reliability. The typical hot carrier induced device degradation characteristics are often observed in devices with a less-than-ideal double gate recess and material layers design. With additional drain engineering work to optimize device power performance, the hot carrier effects can be alleviated drastically. However, depending on nitride deposition processes and nitride quality, Schottky diode degradation (a barrier height increase) was also observed during hot carrier stress. This study facilitates a comprehensive characterization of the hot carrier induced effects in power PHEMT's and recommends an alternative to improve the hot carrier reliability.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"76 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"Hot carrier reliability in high-power PHEMTs\",\"authors\":\"Y. Chou, G. Li, K. Yu, P. Chu, L. Hou, C. Wu, T. Midford\",\"doi\":\"10.1109/GAAS.1996.567634\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"PECVD nitride passivated high-power AlGaAs/InGaAs PHEMTs were used to study their hot carrier reliability. The typical hot carrier induced device degradation characteristics are often observed in devices with a less-than-ideal double gate recess and material layers design. With additional drain engineering work to optimize device power performance, the hot carrier effects can be alleviated drastically. However, depending on nitride deposition processes and nitride quality, Schottky diode degradation (a barrier height increase) was also observed during hot carrier stress. This study facilitates a comprehensive characterization of the hot carrier induced effects in power PHEMT's and recommends an alternative to improve the hot carrier reliability.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"76 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567634\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567634","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
PECVD nitride passivated high-power AlGaAs/InGaAs PHEMTs were used to study their hot carrier reliability. The typical hot carrier induced device degradation characteristics are often observed in devices with a less-than-ideal double gate recess and material layers design. With additional drain engineering work to optimize device power performance, the hot carrier effects can be alleviated drastically. However, depending on nitride deposition processes and nitride quality, Schottky diode degradation (a barrier height increase) was also observed during hot carrier stress. This study facilitates a comprehensive characterization of the hot carrier induced effects in power PHEMT's and recommends an alternative to improve the hot carrier reliability.