半绝缘砷化镓大晶体的生长与性质

R. Ware, W. Higgins, K. O'Hearn, M. Tiernan
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引用次数: 4

摘要

开发了一种改进的液体封装Czochralski (LEC)工艺,该工艺可产生重22公斤,直径110毫米,平行长度435毫米的完全单晶。这些晶体将产生375片晶圆/铸锭,而目前8公斤制程的典型晶圆产量为50-80片。该工艺将GaAs衬底的生产从研究和开发操作转移到真正的生产过程,对衬底和器件制造商来说,经济性都有显著提高。该工艺的关键是通过修改MRSL 15/25拉盘的热几何形状来控制熔体/固体界面形状,使用简单的单加热器系统。在这些长晶体的长度上保持了电性能的均匀性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Growth and properties of very large crystals of semi-insulating gallium arsenide
A modified liquid encapsulated Czochralski (LEC) process has been developed which yields completely single crystals 22 kg in weight, 110 mm diameter and 435 mm parallel length. These crystals will yield up to 375 wafer/ingot compared with the 50-80 wafers typical of the current 8 kg process. This process moves the production of GaAs substrates from a research and development operation to a genuine production process with significant improvements in economy, for both substrate and device manufacturers. The key to the process is the control of melt/solid interface shape by modification of the thermal geometry of the MRSL 15/25 puller, using a simple single heater system. Uniformity of electrical properties was maintained over the length of these long crystals.
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