A monolithic 24.9 GHz limiting amplifier using 0.2 /spl mu/m-AlGaAs/GaAs-HEMTs

Z. Lao, M. Berroth, M. Rieger-Motzer, A. Thiede, W. Bronner, A. Hulsmann, B. Raynor
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引用次数: 2

Abstract

A monolithic limiting amplifier for high-speed communication systems has been fabricated using a 0.2 /spl mu/m enhancement/depletion AlGaAs/GaAs-HEMT (f/sub T/=60/55 GHz) technology. As a limiting amplifier, the circuit has a bandwidth of 24.9 GHz with a gain of 16 dB for an input power of -25 dBm. For applications as a linear amplifier, it has a bandwidth of 19.2 GHz with a gain of 26 dB for an input power of -50 dBm. Performance at a data bit rate of 25 Gb/s for single-ended input was obtained. The circuit features a differential configuration with ac-coupled active source followers to increase frequency band. The power consumption is 600 mW using a single supply voltage of -3.5 V.
采用0.2 /spl μ /m-AlGaAs/GaAs-HEMTs的单片24.9 GHz限制放大器
采用0.2 /spl mu/m增强/耗尽AlGaAs/GaAs-HEMT (f/sub /=60/55 GHz)技术制备了一种高速通信系统的单片限幅放大器。作为限幅放大器,该电路在输入功率为-25 dBm时带宽为24.9 GHz,增益为16 dB。作为线性放大器,它的带宽为19.2 GHz,输入功率为-50 dBm时增益为26 dB。获得了单端输入数据比特率为25 Gb/s的性能。该电路采用带交流耦合有源跟随器的差分配置来增加频带。功耗为600mw,单电源电压为-3.5 V。
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