在1 V电源电压下，亚飞焦耳0.15 /spl mu/m InGaP/InGaAs/GaAs伪晶HEMT DCFL电路

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567741

H. Suehiro, M. Shima, T. Shimura, N. Hara

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引用次数: 6

摘要

我们制作了带有InGaP给体层的侧壁辅助0.15 /spl mu/m t型栅极伪晶HEMT DCFL电路，在电源电压Vdd为0.6 V、驱动栅极宽度为2 /spl mu/m的情况下，获得了22.3 ps的基本延迟和0.8 fJ的功率延迟产品。主从型分频器由8个双输入NAND门组成，采用双栅电极结构，在Vdd为0.8 V时工作频率为10 GHz，功耗为4.5 mW。

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Subfemtojoule 0.15 /spl mu/m InGaP/InGaAs/GaAs pseudomorphic HEMT DCFL circuits under 1 V supply voltage

We have fabricated side-wall assisted 0.15 /spl mu/m T-shaped gate pseudomorphic HEMT DCFL circuits with InGaP donor layers and obtained 22.3 ps basic delay and 0.8 fJ power-delay products at a supply voltage Vdd of 0.6 V with the driver gate width of 2 /spl mu/m. A master-slave type divide-by-two frequency divider which consists of eight 2-input NAND gates using a dual gate electrode structure shows stable operation of 10 GHz toggle frequency with a power consumption of 4.5 mW at Vdd of 0.8 V.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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