{"title":"Integrated circuits for an experimental 10 Gb/s (SONET OC-192) self-healing ring","authors":"A. Jayakumar, T. Banwell, J. Hacker, D. Kong","doi":"10.1109/GAAS.1996.567885","DOIUrl":null,"url":null,"abstract":"SONET OC-192 with a data transmission rate of 9.95328 Gb/s has emerged as the next generation high capacity optical carrier. This paper presents the first complete implementation of 10 Gb/s multiplexing, demultiplexing and SONET framing functions on a 3-chip chip-set. The chip-set consists of an 8:1 multiplexer with auto phase alignment, a 1:8 demultiplexer with SONET frame detection and a multi-purpose interface chip to simplify system integration-all designed to operate at 10 Gb/s for use in an experimental SOMET OC-192 self-healing ring test bed. These experimental research prototype devices are based on the AlGaAs/GaAs Hetero-junction Bipolar Transistor (HBT) technology (f/sub t/=60 GHz). High speed packaging and system integration issues are also addressed.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
SONET OC-192 with a data transmission rate of 9.95328 Gb/s has emerged as the next generation high capacity optical carrier. This paper presents the first complete implementation of 10 Gb/s multiplexing, demultiplexing and SONET framing functions on a 3-chip chip-set. The chip-set consists of an 8:1 multiplexer with auto phase alignment, a 1:8 demultiplexer with SONET frame detection and a multi-purpose interface chip to simplify system integration-all designed to operate at 10 Gb/s for use in an experimental SOMET OC-192 self-healing ring test bed. These experimental research prototype devices are based on the AlGaAs/GaAs Hetero-junction Bipolar Transistor (HBT) technology (f/sub t/=60 GHz). High speed packaging and system integration issues are also addressed.