使用填充栅极制造工艺的低压便携式应用的p - hemt

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567878

M. Martinez, M. Durlam, D. Halchin, R. Burton, J. Huang, S. Tehrani, A. Reyes, D. Green, N. Cody

{"title":"使用填充栅极制造工艺的低压便携式应用的p - hemt","authors":"M. Martinez, M. Durlam, D. Halchin, R. Burton, J. Huang, S. Tehrani, A. Reyes, D. Green, N. Cody","doi":"10.1109/GAAS.1996.567878","DOIUrl":null,"url":null,"abstract":"A fundamental change in gate formation to a filled gate process was combined with changes in film deposition. The resulting p-HEMT manufacturing process gives much better performance for low-voltage RF amplification. At a drain voltage of 3.5 V, a 12-mm periphery device fabricated by this method is capable of 33 dBm output power with an associated power-added efficiency of greater than 75%.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"262 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"P-HEMTs for low-voltage portable applications using filled gate fabrication process\",\"authors\":\"M. Martinez, M. Durlam, D. Halchin, R. Burton, J. Huang, S. Tehrani, A. Reyes, D. Green, N. Cody\",\"doi\":\"10.1109/GAAS.1996.567878\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A fundamental change in gate formation to a filled gate process was combined with changes in film deposition. The resulting p-HEMT manufacturing process gives much better performance for low-voltage RF amplification. At a drain voltage of 3.5 V, a 12-mm periphery device fabricated by this method is capable of 33 dBm output power with an associated power-added efficiency of greater than 75%.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"262 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567878\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567878","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 14

摘要

栅极形成到填充栅极过程的根本变化与薄膜沉积的变化相结合。由此产生的p-HEMT制造工艺为低压射频放大提供了更好的性能。在漏极电压为3.5 V时，用这种方法制造的12mm外围器件的输出功率为33dbm，附加功率效率大于75%。

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P-HEMTs for low-voltage portable applications using filled gate fabrication process

A fundamental change in gate formation to a filled gate process was combined with changes in film deposition. The resulting p-HEMT manufacturing process gives much better performance for low-voltage RF amplification. At a drain voltage of 3.5 V, a 12-mm periphery device fabricated by this method is capable of 33 dBm output power with an associated power-added efficiency of greater than 75%.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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