7毫米门宽功率异质结场效应管，用于锂离子电池操作的个人数字蜂窝电话

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567821

M. Tomita, K. Yamaguchi, H. Oikawa, K. Kuzuhara

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引用次数: 18

摘要

本文描述了用于个人数字手机的门宽7.0 mm双掺杂AlGaAs-InGaAs-AlGaAs异质结场效应管(HJFET)的950 MHz功率性能，该晶体管具有0.8 /spl mu/m长的WSi栅极。制备的HJFET表现为2.3 /spl ω /。mm导通电阻，600 mA/mm最大漏极电流，330 mS/mm跨导和12.7 V栅漏击穿电压。在3.4 V的漏极偏置下，HJFET的输出功率为1.23 W (30.9 dBm)，功率增加效率为56.3%，在50 kHz偏心频率下邻近通道漏功率为-51.5 dBc。

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7 mm gate width power heterojunction FETs for Li-ion battery operated personal digital cellular phones

This paper describes 950 MHz power performance of a 7.0 mm gate width double-doped AlGaAs-InGaAs-AlGaAs heterojunction FET (HJFET) with a 0.8 /spl mu/m long WSi gate for personal digital cellular phones. The fabricated HJFET exhibited 2.3 /spl Omega/.mm on-resistance, 600 mA/mm maximum drain current, 330 mS/mm transconductance and 12.7 V gate-to-drain breakdown voltage. Operated with a drain bias of 3.4 V, the HJFET demonstrated 1.23 W (30.9 dBm) output power and 56.3% power-added efficiency with -51.5 dBc adjacent channel leakage power at 50 kHz off-center frequency.

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GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

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