集成电路的实验10 Gb/s (SONET OC-192)自愈环

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996 Pub Date : 1996-11-03 DOI:10.1109/GAAS.1996.567885

A. Jayakumar, T. Banwell, J. Hacker, D. Kong

{"title":"集成电路的实验10 Gb/s (SONET OC-192)自愈环","authors":"A. Jayakumar, T. Banwell, J. Hacker, D. Kong","doi":"10.1109/GAAS.1996.567885","DOIUrl":null,"url":null,"abstract":"SONET OC-192 with a data transmission rate of 9.95328 Gb/s has emerged as the next generation high capacity optical carrier. This paper presents the first complete implementation of 10 Gb/s multiplexing, demultiplexing and SONET framing functions on a 3-chip chip-set. The chip-set consists of an 8:1 multiplexer with auto phase alignment, a 1:8 demultiplexer with SONET frame detection and a multi-purpose interface chip to simplify system integration-all designed to operate at 10 Gb/s for use in an experimental SOMET OC-192 self-healing ring test bed. These experimental research prototype devices are based on the AlGaAs/GaAs Hetero-junction Bipolar Transistor (HBT) technology (f/sub t/=60 GHz). High speed packaging and system integration issues are also addressed.","PeriodicalId":365997,"journal":{"name":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Integrated circuits for an experimental 10 Gb/s (SONET OC-192) self-healing ring\",\"authors\":\"A. Jayakumar, T. Banwell, J. Hacker, D. Kong\",\"doi\":\"10.1109/GAAS.1996.567885\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SONET OC-192 with a data transmission rate of 9.95328 Gb/s has emerged as the next generation high capacity optical carrier. This paper presents the first complete implementation of 10 Gb/s multiplexing, demultiplexing and SONET framing functions on a 3-chip chip-set. The chip-set consists of an 8:1 multiplexer with auto phase alignment, a 1:8 demultiplexer with SONET frame detection and a multi-purpose interface chip to simplify system integration-all designed to operate at 10 Gb/s for use in an experimental SOMET OC-192 self-healing ring test bed. These experimental research prototype devices are based on the AlGaAs/GaAs Hetero-junction Bipolar Transistor (HBT) technology (f/sub t/=60 GHz). High speed packaging and system integration issues are also addressed.\",\"PeriodicalId\":365997,\"journal\":{\"name\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1996.567885\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1996.567885","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

数据传输速率为9.95328 Gb/s的SONET OC-192已成为下一代高容量光载波。本文首次在一个3片芯片组上完整实现了10gb /s的多路复用、解路复用和SONET帧功能。该芯片组包括一个具有自动相位校准功能的8:1多路复用器、一个具有SONET帧检测功能的1:8解路复用器和一个简化系统集成的多用途接口芯片，所有这些都设计为在实验性的SOMET OC-192自修复环测试台上以10gb /s的速度运行。这些实验研究原型器件基于AlGaAs/GaAs异质结双极晶体管(HBT)技术(f/sub /=60 GHz)。高速封装和系统集成问题也得到了解决。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Integrated circuits for an experimental 10 Gb/s (SONET OC-192) self-healing ring

SONET OC-192 with a data transmission rate of 9.95328 Gb/s has emerged as the next generation high capacity optical carrier. This paper presents the first complete implementation of 10 Gb/s multiplexing, demultiplexing and SONET framing functions on a 3-chip chip-set. The chip-set consists of an 8:1 multiplexer with auto phase alignment, a 1:8 demultiplexer with SONET frame detection and a multi-purpose interface chip to simplify system integration-all designed to operate at 10 Gb/s for use in an experimental SOMET OC-192 self-healing ring test bed. These experimental research prototype devices are based on the AlGaAs/GaAs Hetero-junction Bipolar Transistor (HBT) technology (f/sub t/=60 GHz). High speed packaging and system integration issues are also addressed.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996

自引率

0.00%

发文量