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Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

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Growth direction dependence of polarization properties in surface-emitting lasers with strained quantum wells 应变量子阱表面发射激光器偏振特性的生长方向依赖性
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519310
T. Ohtoshi, T. Kuroda, A. Niwa, S. Tsuji, K. Uomi
{"title":"Growth direction dependence of polarization properties in surface-emitting lasers with strained quantum wells","authors":"T. Ohtoshi, T. Kuroda, A. Niwa, S. Tsuji, K. Uomi","doi":"10.1109/ISLC.1994.519310","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519310","url":null,"abstract":"Polarization properties of surface-emitting lasers are analyzed theoretically for various crystallographic directions. In strained quantum wells on (NN1) substrates (N/spl ges/2), the polarization can be controlled, facilitating high optical gains.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122097000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Complex-coupled /spl lambda//4-shifted DFB lasers with a flat FM response from 10 kHz to 17 GHz 复耦合/spl λ //4位移DFB激光器，具有10 kHz至17 GHz的平坦FM响应
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518913
M. Okai, M. Suzuki, T. Taniwatari, N. Chinone
{"title":"Complex-coupled /spl lambda//4-shifted DFB lasers with a flat FM response from 10 kHz to 17 GHz","authors":"M. Okai, M. Suzuki, T. Taniwatari, N. Chinone","doi":"10.1109/ISLC.1994.518913","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518913","url":null,"abstract":"Summary form only given. InGaAsP semiconductor lasers with a flat FM response are required for coherent FSK transmission systems. The proposed complex-coupled /spl lambda//4-shifted DFB laser gives a flat FM response from 10 kHz to 17 GHz.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123493881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Novel high performance strained layer MQW monolithically integrated DFB laser-electroabsorption modulator using one identical single active layer 新型高性能应变层MQW单片集成DFB激光电吸收调制器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518909
A. Ramdane, A. Ougazzaden, F. Devaux, Franck Delorme, M. Schneider, J. Landreau, A. Gloukhian
{"title":"Novel high performance strained layer MQW monolithically integrated DFB laser-electroabsorption modulator using one identical single active layer","authors":"A. Ramdane, A. Ougazzaden, F. Devaux, Franck Delorme, M. Schneider, J. Landreau, A. Gloukhian","doi":"10.1109/ISLC.1994.518909","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518909","url":null,"abstract":"Summary form only given. A novel and very simple approach is demonstrated for strained layer InGaAsP MQW distributed feedback laser-electroabsorption modulator monolithic integration with very high performance at 1.5 /spl mu/m (13.6 dB extinction ratio at 1.5 V operating voltage for a 70 /spl mu/m long modulator).","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124720091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Anomalously slow carrier-phonon interaction in InGaAs/InGaAsP multi-quantum-well investigated by time-development of carrier temperature InGaAs/InGaAsP多量子阱中异常慢载流子-声子相互作用的载流子温度时间发展研究
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518919
M. Nido, A. Suzuki
{"title":"Anomalously slow carrier-phonon interaction in InGaAs/InGaAsP multi-quantum-well investigated by time-development of carrier temperature","authors":"M. Nido, A. Suzuki","doi":"10.1109/ISLC.1994.518919","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518919","url":null,"abstract":"Extremely large electron-LO phonon intrasubband scattering time (8 ps) was obtained, by the rate-equation analysis for the experimental time-development of the carrier temperature in a 1.5 /spl mu/m-band multi-quantum-well (MQW) laser amplifier. Consequently, pronounced optical output power saturation was predicted in the MQW laser.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127451847","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
InAsSb/AlAsSb double-heterostructure and InAsSb/InAlAs quantum-well diode lasers emitting at /spl sim/4 /spl mu/m InAsSb/AlAsSb双异质结构和InAsSb/InAlAs量子阱二极管激光器，发射频率为/spl sim/4 /spl mu/m
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518903
H.K. Choi, G. Turner, Z. Liau
{"title":"InAsSb/AlAsSb double-heterostructure and InAsSb/InAlAs quantum-well diode lasers emitting at /spl sim/4 /spl mu/m","authors":"H.K. Choi, G. Turner, Z. Liau","doi":"10.1109/ISLC.1994.518903","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518903","url":null,"abstract":"Studies InAsSb/AlAsSb double-heterostructure lasers emitting at 3.9 /spl mu/m which operated pulsed up to 170 K and CW up to 105 K, with CW power of 30 mW at 70 K. InAsSb/InAlAs quantum-well lasers emitting at 4.5 /spl mu/m operated pulsed up to 85 K.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129273970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-power and high-speed performance of gain-coupled 1.3 /spl mu/m strained-layer MQW DFB lasers 增益耦合1.3 /spl μ m应变层MQW DFB激光器的大功率高速性能
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518914
H. Lu, C. Blaauw, B. Benyon, T. Makino
{"title":"High-power and high-speed performance of gain-coupled 1.3 /spl mu/m strained-layer MQW DFB lasers","authors":"H. Lu, C. Blaauw, B. Benyon, T. Makino","doi":"10.1109/ISLC.1994.518914","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518914","url":null,"abstract":"Summary form only given. High power and high modulation bandwidth 1.3 /spl mu/m DFB InGaAsP QW lasers with gain coupling in a strained-layer MQW active region are reported for the first time. Due to the nature of the gain coupling effect, devices show lasing spectra with a consistently high single mode yield.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129025832","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
2.2 W cw diffraction-limited monolithically integrated master oscillator power amplifier at 854 nm 2.2 854 nm的wcw衍射限制单片集成主振荡器功率放大器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519357
S. O’Brien, R. Lang, D. Welch, R. Parke, D. Scifres
{"title":"2.2 W cw diffraction-limited monolithically integrated master oscillator power amplifier at 854 nm","authors":"S. O’Brien, R. Lang, D. Welch, R. Parke, D. Scifres","doi":"10.1109/ISLC.1994.519357","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519357","url":null,"abstract":"An GaAs-AlGaAs monolithically integrated master oscillator power amplifier (M-MOPA) operating in a single longitudinal mode at 854 nm has been fabricated which produces 2.2 W cw with a single-lobed, diffraction-limited far field pattern. Additionally, the extinction ratio in the far field with the oscillator turned off is 26 dB.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121559091","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
High-power, coherent phased array of monolithic flared amplifier-master oscillator power amplifiers 大功率、相干单片喇叭放大器相控阵——主振荡器功率放大器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519361
J. Osinski, D. Mehuys, D. Welch, K. Dzurko, R. Waarts, R. Lang, J. Major
{"title":"High-power, coherent phased array of monolithic flared amplifier-master oscillator power amplifiers","authors":"J. Osinski, D. Mehuys, D. Welch, K. Dzurko, R. Waarts, R. Lang, J. Major","doi":"10.1109/ISLC.1994.519361","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519361","url":null,"abstract":"Summary form only given. A coherent array of MFA-MOPAs is demonstrated by integrating a DBR laser, single-mode power distribution network, phase modulators, and flared amplifiers on a single chip. 39 W of coherent, pulsed output power is obtained.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122661726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intra-cavity contacted vertical cavity laser arrays optimized for low current, high speed interconnect applications 针对低电流、高速互连应用优化的腔内接触垂直腔激光阵列
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519342
J. Scott, B. Thibeault, C. Mahon, F. Peters, D. Young, L. Coldren
{"title":"Intra-cavity contacted vertical cavity laser arrays optimized for low current, high speed interconnect applications","authors":"J. Scott, B. Thibeault, C. Mahon, F. Peters, D. Young, L. Coldren","doi":"10.1109/ISLC.1994.519342","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519342","url":null,"abstract":"Experimental measurements of the performance of intra-cavity contacted vertical cavity lasers for short haul Gigabit data link applications are presented. At an output power of 1 mW these top-surface-emitting, sub-milliamp threshold lasers have bandwidths above 7 GHz while consuming only 10 mW of electrical power.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131549567","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguide lasers suitable for monolithic integration 适用于单片集成的基于gaas的伪晶MQW脊波导激光器的低偏置电流直接调制高达33 GHz
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519338
J. Ralston, K. Eisele, R. E. Sah, E. Larkins, S. Weisser, J. Rosenzweig, J. Fleissner, K. Bender
{"title":"Low-bias-current direct modulation up to 33 GHz in GaAs-based pseudomorphic MQW ridge-waveguide lasers suitable for monolithic integration","authors":"J. Ralston, K. Eisele, R. E. Sah, E. Larkins, S. Weisser, J. Rosenzweig, J. Fleissner, K. Bender","doi":"10.1109/ISLC.1994.519338","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519338","url":null,"abstract":"The successful application of direct laser modulation for very-high-speed digital transmission or microwave/millimeter-wave analog optical links requires a) reductions in the drive currents required to achieve high modulation bandwidths, b) increases in the maximum intrinsic modulation bandwidths, c) reductions in laser chirp under high-speed direct modulation, and d) high-speed laser structures which can be monolithically integrated with high-speed transistors. Utilizing a single epitaxial growth (HEMT+laser) and an air-bridged, coplanar electrode geometry, a complete technological process has also been developed in our labs for the monolithic integration of vertically-compact GaAs MQW ridge-waveguide (RWG) lasers with double pulse-doped GaAs/AlGaAs QW enhancement/ depletion HEMT electronics.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116959753","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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