M. Fallahi, F. Chatenoud, M. Dion, I. Templeton, R. Barber, J. Thompson
{"title":"Circular-grating surface-emitting distributed Bragg reflector lasers on an InGaAs/GaAs structure for 0.98 /spl mu/m applications","authors":"M. Fallahi, F. Chatenoud, M. Dion, I. Templeton, R. Barber, J. Thompson","doi":"10.1109/ISLC.1994.519174","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519174","url":null,"abstract":"InGaAs/GaAs circular-grating surface-emission DBR lasers with a pulsed external efficiency, over 11% (power>100 mW) and a divergence of 1/spl deg/ are obtained. We also demonstrate the first CW operation near room temperature.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121608759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Phillips, A. T. Meney, A. Prins, J. Sly, E. O’Reilly, D. Dunstan, A. Adams, A. Valster
{"title":"New determination of the band structure of disordered AlGaInP and its influence on visible laser characteristics","authors":"A. Phillips, A. T. Meney, A. Prins, J. Sly, E. O’Reilly, D. Dunstan, A. Adams, A. Valster","doi":"10.1109/ISLC.1994.519334","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519334","url":null,"abstract":"Using hydrostatic pressure, new energies for the X-minima, L-minima and band offsets in (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P were obtained and correlated with temperature and pressure measurements on visible lasers using diffusion models.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122119392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Nakajima, J. Charil, S. Slempkes, A. Gloukhian, D. Robein, D. Mathoorasing, S. Cherif, J. Bouley
{"title":"Influence of gain saturation on the tuning range and tuning rate of three-contact DFB lasers and amplifier-filters: modelling and experiments","authors":"H. Nakajima, J. Charil, S. Slempkes, A. Gloukhian, D. Robein, D. Mathoorasing, S. Cherif, J. Bouley","doi":"10.1109/ISLC.1994.519319","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519319","url":null,"abstract":"Summary form only given. The aim of the paper is to show the impact of the modal gain saturation on the tuning-range as well as the tuning rate of three-contact DFB lasers (and filters) at single current modulation. Taking into account the modal gain saturation due to gain-curve-shift, we have demonstrated theoretically and experimentally the feasibility of a wide wavelength tuning (2.5 nm) and a high tuning rate with a small power change by single (lateral) current tuning in the case of three-contact DFB lasers and filters.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126303819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Improved performance of semiconductor ring lasers with multi-mode interference output couplers","authors":"T. Krauss, P. Laybourn, R. Delarue","doi":"10.1109/ISLC.1994.519147","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519147","url":null,"abstract":"We present strip-loaded ring lasers in GaAs/AlGaAs that operate with a threshold current of 140 mA for a total pumped device length of 4.5 mm and a quantum efficiency of 7% (per output), to our knowledge the highest efficiency for such lasers reported to date.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125563849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Sagawa, T. Toyonaka, K. Hiramoto, K. Shinoda, K. Uomi
{"title":"High-power high-temperature operation of 0.98-/spl mu/m S-SQW lasers with InGaAsP (Eg: 1.61 eV) barriers","authors":"M. Sagawa, T. Toyonaka, K. Hiramoto, K. Shinoda, K. Uomi","doi":"10.1109/ISLC.1994.519360","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519360","url":null,"abstract":"In this paper, we systematically investigate the advantage of InGaAsP (Eg: 1.61 eV) barriers, which have the bandgap difference of 345 meV, against temperature characteristics, and compare them with conventional GaAs barriers. The excellent temperature characteristics of the laser with InGaAsP barriers results in high power operation at high temperatures.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124635633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Progress in high power semiconductor lasers","authors":"D. Welch","doi":"10.1109/ISLC.1994.518892","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518892","url":null,"abstract":"Advances in high power semiconductor laser diodes have resulted in both dramatic demonstrations of laser diode characteristics and of innovative systems designs based on these semiconductor sources. As a measure of the capabilities of the semiconductor laser diodes; monolithic laser diode sources have been fabricated which operate to greater than 120 W CW from a 1 /spl mu/m by 1 cm emitting aperture. As a result of such high power demonstrations, the application base of laser diodes can be expanded from the low power, few milliwatt, applications to applications that require kilowatts of power. As a result laser diodes have become the visionary technology for almost all laser based systems. The advances in high power laser sources can be roughly categorized into four technology areas; (i) higher power output, (ii) greater reliability, (iii) increased coverage of the spectrum and (iv) the development of high power diffraction limited sources. In addition to the development of high power diode lasers, much of the recent advances include areas of hybrid technologies where the coupling of high power semiconductor laser diodes with complimentary technologies have further advanced the state of the art in laser sources. The following discussions will try to cover the advances in the four categories by reviewing the key demonstrations in the development of high power sources.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121064350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Vermeire, F. Vermaerke, R. Baets, P. van Daele, P. Demeester
{"title":"Low threshold current 780 nm InAlGaAs/AlGaAs-strained QW lasers and the integration with a passive, non-absorbing tapered mode-size transformer","authors":"G. Vermeire, F. Vermaerke, R. Baets, P. van Daele, P. Demeester","doi":"10.1109/ISLC.1994.519168","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519168","url":null,"abstract":"Summary form only given. In AlGaAs/AlGaAs QW lasers operating at 780 nm have been realised with threshold currents down to 8.2 mA. The monolithic integration with a passive, non-absorbing mode-size transformer has been demonstrated for the first time.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134237777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High power quantum-well gain-coupled (GC) DFB lasers at 1.3 /spl mu/m and 1.55 /spl mu/m","authors":"B. Borchert, J. Rieger, B. Stegmuller","doi":"10.1109/ISLC.1994.518912","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518912","url":null,"abstract":"Summary form only given. High power characteristics of InGaAsP quantum-well gain-coupled DFB lasers with a loss grating are presented. Among these are record single-mode (SM) values of 115 mW at 1.3 /spl mu/m and 95 mW at 1.55 /spl mu/m. The SM-yield at 20 mW is as high as 66%.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131970318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Extremely small active stripe laser diodes (EXSAS-LDs) for 17-channel low threshold array","authors":"S. Kitamura, T. Sasaki, K. Komatsu, M. Kitamura","doi":"10.1109/ISLC.1994.519151","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519151","url":null,"abstract":"Summary form only given. Uniform 17-channel array of low threshold (3.5 mA, av.). 1.3 /spl mu/m wavelength lasers was realized with submicron wide bulk active layers grown by selective MOVPE technique.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115103288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Raybon, N. Froberg, U. Koren, B. Miller, M. Young, M. Chien, A. Johnson, P. Hansen, C. Burrus, J. Veselka, A. Gnauck
{"title":"Digitally encoded optical pulse generation from an integrated DBR laser-modulator","authors":"G. Raybon, N. Froberg, U. Koren, B. Miller, M. Young, M. Chien, A. Johnson, P. Hansen, C. Burrus, J. Veselka, A. Gnauck","doi":"10.1109/ISLC.1994.518911","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518911","url":null,"abstract":"Summary form only given. We demonstrate a novel modulation scheme in which both data-encoding and pulse generation are achieved using a single integrated semiconductor laser/modulator. Data-encoded, near-transform limited 66 ps pulses are obtained at 2.5 Gbit/s and BER performance is reported.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116085642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}