Proceedings of IEEE 14th International Semiconductor Laser Conference最新文献

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Circular-grating surface-emitting distributed Bragg reflector lasers on an InGaAs/GaAs structure for 0.98 /spl mu/m applications 基于InGaAs/GaAs结构的圆光栅面发射分布式Bragg反射激光器,应用于0.98 /spl mu/m
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519174
M. Fallahi, F. Chatenoud, M. Dion, I. Templeton, R. Barber, J. Thompson
{"title":"Circular-grating surface-emitting distributed Bragg reflector lasers on an InGaAs/GaAs structure for 0.98 /spl mu/m applications","authors":"M. Fallahi, F. Chatenoud, M. Dion, I. Templeton, R. Barber, J. Thompson","doi":"10.1109/ISLC.1994.519174","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519174","url":null,"abstract":"InGaAs/GaAs circular-grating surface-emission DBR lasers with a pulsed external efficiency, over 11% (power>100 mW) and a divergence of 1/spl deg/ are obtained. We also demonstrate the first CW operation near room temperature.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121608759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
New determination of the band structure of disordered AlGaInP and its influence on visible laser characteristics 无序AlGaInP带结构的新测定及其对可见激光特性的影响
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519334
A. Phillips, A. T. Meney, A. Prins, J. Sly, E. O’Reilly, D. Dunstan, A. Adams, A. Valster
{"title":"New determination of the band structure of disordered AlGaInP and its influence on visible laser characteristics","authors":"A. Phillips, A. T. Meney, A. Prins, J. Sly, E. O’Reilly, D. Dunstan, A. Adams, A. Valster","doi":"10.1109/ISLC.1994.519334","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519334","url":null,"abstract":"Using hydrostatic pressure, new energies for the X-minima, L-minima and band offsets in (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P were obtained and correlated with temperature and pressure measurements on visible lasers using diffusion models.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122119392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of gain saturation on the tuning range and tuning rate of three-contact DFB lasers and amplifier-filters: modelling and experiments 增益饱和对三接触DFB激光器和放大滤波器调谐范围和调谐速率的影响:建模和实验
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519319
H. Nakajima, J. Charil, S. Slempkes, A. Gloukhian, D. Robein, D. Mathoorasing, S. Cherif, J. Bouley
{"title":"Influence of gain saturation on the tuning range and tuning rate of three-contact DFB lasers and amplifier-filters: modelling and experiments","authors":"H. Nakajima, J. Charil, S. Slempkes, A. Gloukhian, D. Robein, D. Mathoorasing, S. Cherif, J. Bouley","doi":"10.1109/ISLC.1994.519319","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519319","url":null,"abstract":"Summary form only given. The aim of the paper is to show the impact of the modal gain saturation on the tuning-range as well as the tuning rate of three-contact DFB lasers (and filters) at single current modulation. Taking into account the modal gain saturation due to gain-curve-shift, we have demonstrated theoretically and experimentally the feasibility of a wide wavelength tuning (2.5 nm) and a high tuning rate with a small power change by single (lateral) current tuning in the case of three-contact DFB lasers and filters.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126303819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Improved performance of semiconductor ring lasers with multi-mode interference output couplers 采用多模干涉输出耦合器改善半导体环形激光器的性能
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519147
T. Krauss, P. Laybourn, R. Delarue
{"title":"Improved performance of semiconductor ring lasers with multi-mode interference output couplers","authors":"T. Krauss, P. Laybourn, R. Delarue","doi":"10.1109/ISLC.1994.519147","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519147","url":null,"abstract":"We present strip-loaded ring lasers in GaAs/AlGaAs that operate with a threshold current of 140 mA for a total pumped device length of 4.5 mm and a quantum efficiency of 7% (per output), to our knowledge the highest efficiency for such lasers reported to date.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125563849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
High-power high-temperature operation of 0.98-/spl mu/m S-SQW lasers with InGaAsP (Eg: 1.61 eV) barriers 具有InGaAsP(例如:1.61 eV)势垒的0.98-/spl mu/m S-SQW激光器的高功率高温工作
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519360
M. Sagawa, T. Toyonaka, K. Hiramoto, K. Shinoda, K. Uomi
{"title":"High-power high-temperature operation of 0.98-/spl mu/m S-SQW lasers with InGaAsP (Eg: 1.61 eV) barriers","authors":"M. Sagawa, T. Toyonaka, K. Hiramoto, K. Shinoda, K. Uomi","doi":"10.1109/ISLC.1994.519360","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519360","url":null,"abstract":"In this paper, we systematically investigate the advantage of InGaAsP (Eg: 1.61 eV) barriers, which have the bandgap difference of 345 meV, against temperature characteristics, and compare them with conventional GaAs barriers. The excellent temperature characteristics of the laser with InGaAsP barriers results in high power operation at high temperatures.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124635633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Progress in high power semiconductor lasers 高功率半导体激光器的进展
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518892
D. Welch
{"title":"Progress in high power semiconductor lasers","authors":"D. Welch","doi":"10.1109/ISLC.1994.518892","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518892","url":null,"abstract":"Advances in high power semiconductor laser diodes have resulted in both dramatic demonstrations of laser diode characteristics and of innovative systems designs based on these semiconductor sources. As a measure of the capabilities of the semiconductor laser diodes; monolithic laser diode sources have been fabricated which operate to greater than 120 W CW from a 1 /spl mu/m by 1 cm emitting aperture. As a result of such high power demonstrations, the application base of laser diodes can be expanded from the low power, few milliwatt, applications to applications that require kilowatts of power. As a result laser diodes have become the visionary technology for almost all laser based systems. The advances in high power laser sources can be roughly categorized into four technology areas; (i) higher power output, (ii) greater reliability, (iii) increased coverage of the spectrum and (iv) the development of high power diffraction limited sources. In addition to the development of high power diode lasers, much of the recent advances include areas of hybrid technologies where the coupling of high power semiconductor laser diodes with complimentary technologies have further advanced the state of the art in laser sources. The following discussions will try to cover the advances in the four categories by reviewing the key demonstrations in the development of high power sources.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121064350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Low threshold current 780 nm InAlGaAs/AlGaAs-strained QW lasers and the integration with a passive, non-absorbing tapered mode-size transformer 低阈值电流780 nm InAlGaAs/ algaas应变QW激光器和集成无源,非吸收锥形模式尺寸变压器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519168
G. Vermeire, F. Vermaerke, R. Baets, P. van Daele, P. Demeester
{"title":"Low threshold current 780 nm InAlGaAs/AlGaAs-strained QW lasers and the integration with a passive, non-absorbing tapered mode-size transformer","authors":"G. Vermeire, F. Vermaerke, R. Baets, P. van Daele, P. Demeester","doi":"10.1109/ISLC.1994.519168","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519168","url":null,"abstract":"Summary form only given. In AlGaAs/AlGaAs QW lasers operating at 780 nm have been realised with threshold currents down to 8.2 mA. The monolithic integration with a passive, non-absorbing mode-size transformer has been demonstrated for the first time.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"104 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134237777","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High power quantum-well gain-coupled (GC) DFB lasers at 1.3 /spl mu/m and 1.55 /spl mu/m 1.3 /spl mu/m和1.55 /spl mu/m高功率量子阱增益耦合(GC) DFB激光器
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518912
B. Borchert, J. Rieger, B. Stegmuller
{"title":"High power quantum-well gain-coupled (GC) DFB lasers at 1.3 /spl mu/m and 1.55 /spl mu/m","authors":"B. Borchert, J. Rieger, B. Stegmuller","doi":"10.1109/ISLC.1994.518912","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518912","url":null,"abstract":"Summary form only given. High power characteristics of InGaAsP quantum-well gain-coupled DFB lasers with a loss grating are presented. Among these are record single-mode (SM) values of 115 mW at 1.3 /spl mu/m and 95 mW at 1.55 /spl mu/m. The SM-yield at 20 mW is as high as 66%.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131970318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Extremely small active stripe laser diodes (EXSAS-LDs) for 17-channel low threshold array 用于17通道低阈值阵列的极小有源条纹激光器(exsas - ld)
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.519151
S. Kitamura, T. Sasaki, K. Komatsu, M. Kitamura
{"title":"Extremely small active stripe laser diodes (EXSAS-LDs) for 17-channel low threshold array","authors":"S. Kitamura, T. Sasaki, K. Komatsu, M. Kitamura","doi":"10.1109/ISLC.1994.519151","DOIUrl":"https://doi.org/10.1109/ISLC.1994.519151","url":null,"abstract":"Summary form only given. Uniform 17-channel array of low threshold (3.5 mA, av.). 1.3 /spl mu/m wavelength lasers was realized with submicron wide bulk active layers grown by selective MOVPE technique.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115103288","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Digitally encoded optical pulse generation from an integrated DBR laser-modulator 集成DBR激光调制器产生的数字编码光脉冲
Proceedings of IEEE 14th International Semiconductor Laser Conference Pub Date : 1994-09-19 DOI: 10.1109/ISLC.1994.518911
G. Raybon, N. Froberg, U. Koren, B. Miller, M. Young, M. Chien, A. Johnson, P. Hansen, C. Burrus, J. Veselka, A. Gnauck
{"title":"Digitally encoded optical pulse generation from an integrated DBR laser-modulator","authors":"G. Raybon, N. Froberg, U. Koren, B. Miller, M. Young, M. Chien, A. Johnson, P. Hansen, C. Burrus, J. Veselka, A. Gnauck","doi":"10.1109/ISLC.1994.518911","DOIUrl":"https://doi.org/10.1109/ISLC.1994.518911","url":null,"abstract":"Summary form only given. We demonstrate a novel modulation scheme in which both data-encoding and pulse generation are achieved using a single integrated semiconductor laser/modulator. Data-encoded, near-transform limited 66 ps pulses are obtained at 2.5 Gbit/s and BER performance is reported.","PeriodicalId":356540,"journal":{"name":"Proceedings of IEEE 14th International Semiconductor Laser Conference","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1994-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116085642","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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